Thermal-shock resistance<i> </i>of <i>in-situ</i> SiC nanowire-toughened SiC ceramics

XIAO Yuan; LI Lu; ZHENG Ruixiao; MA Chaoli

doi:10.13801/j.cnki.fhclxb.20220804.003

Volume 39 Issue 9

Aug. 2022

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Article Navigation > Acta Materiae Compositae Sinica > 2022 > 39(9): 4366-4374

XIAO Yuan, LI Lu, ZHENG Ruixiao, et al. Thermal-shock resistance of in-situ SiC nanowire-toughened SiC ceramics[J]. Acta Materiae Compositae Sinica, 2022, 39(9): 4366-4374. doi: 10.13801/j.cnki.fhclxb.20220804.003

Citation:

XIAO Yuan, LI Lu, ZHENG Ruixiao, et al. Thermal-shock resistance of in-situ SiC nanowire-toughened SiC ceramics[J]. Acta Materiae Compositae Sinica, 2022, 39(9): 4366-4374. doi: 10.13801/j.cnki.fhclxb.20220804.003

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Thermal-shock resistance of in-situ SiC nanowire-toughened SiC ceramics

doi: 10.13801/j.cnki.fhclxb.20220804.003

XIAO Yuan^1
,,
LI Lu²,
ZHENG Ruixiao¹,
MA Chaoli^{1
,
,}

1.
Key Laboratory of Aerospace Advanced Materials and Performance of Ministry of Education, School of Materials Science and Engineering, Beihang University, Beijing 100191, China
2.
Research Institute for Frontier Science, Beihang University, Beijing 100191, China

Funds: National Natural Science Foundation of China（51902010, 92060301）；National Major Science and Technology Projects of China (J2019-VI-0001-0114)

Received Date: 2022-06-17
Accepted Date: 2022-07-26
Rev Recd Date: 2022-07-18

Available Online: 2022-08-05

Publish Date: 2022-08-22

Abstract

Abstract

The brittleness and insufficient thermal-shock resistance are the critical problems for the extensive applications of SiC ceramics. Low-density SiC ceramics decorated with in-situ SiC nanowires were fabricated via the pyrolysis of polycarbosilane assisted by ferrocene. They were further densified by the technique of precursor infiltration and pyrolysis to prepare in-situ SiC nanowire-toughened SiC ceramics. The experimental results showed that, compared with the SiC ceramics without nanowires, the thermal shock resistance of the in-situ SiC nanowire-toughened SiC ceramics was improved significantly, whose oxidation mass gain was only 2.53% and decreased by 59% after 30 thermal cycles between room temperature and 1500 ℃. The corresponding microstructural analysis indicated that the synthesized SiC nanowires were β-SiC and contained some stacking faults. The β-SiC nanowires grew along the preferential orientation of <111> and its growth was governed by a vapor-liquid-solid mechanism. The in-situ SiC nanowires could effectively alleviate the stress concentration due to the ceramic preparation and the thermal cycles between high and low temperatures. The improved fracture toughness and thermal-shock resistance could be attributed to the toughening mechanism including nanowire bridging and pull-out, as well as the decrease of crack number and size in SiC ceramics. After the introduction of SiC nanowires, the average crack length of SiC ceramics decreased from 27.7 μm to 18.2 μm, and the fracture toughness increased from 3.76 MPa·m^1/2 to 7.83 MPa·m^1/2.
- SiC ceramic,
- in-situ SiC nanowires,
- growth mechanism,
- polycarbosilane,
- thermal shock resistance
Long Abstrsct
Innovation Points

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References(34)

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