High thermal conductivity SiCP/Al electronic packaging materials prepared by spark plasma sintering[J]. Acta Materiae Compositae Sinica, 2010, 27(1): 57-61.
Citation: High thermal conductivity SiCP/Al electronic packaging materials prepared by spark plasma sintering[J]. Acta Materiae Compositae Sinica, 2010, 27(1): 57-61.

High thermal conductivity SiCP/Al electronic packaging materials prepared by spark plasma sintering

  • Received Date: 2009-02-15
  • Rev Recd Date: 2009-05-27
  • Publish Date: 2010-02-15
  • The high thermal conductivity SiCP/Al electronic packaging materials were successfully prepared by the spark plasma sintering (SPS) process. The effects of sintering temperature and holding time on the microstructure of  SiCP/Al  composites were researched. And thermo-physical characteristics of final composites were also evaluated. The results show that the thermal conductivity of 70 vol % SiCP/Al composites fabricated by SPS is 195. 5 W· (m·K)-1, which corresponds to that of 15 %W2Cu and decuples that of Kovar alloy; the density is 3. 0 g·cm-3; the thermal expansion coefficient (CTE) is 6. 8 ×10-6 K-1, which is close to the subst rate materials; and the bend st rength is 410 MPa, tensile strength is 190 MPa, satisfying the electronic packaging materials needs in thermal and mechanics properties.

     

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      沈阳化工大学材料科学与工程学院 沈阳 110142

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