Bonding and strain behavior of graphene/boron nitride diaphragm of micro-electro-mechanical system pressure sensor

QIN Yafei; ZENG Yu; WANG Dong; YANG Youpeng; LU Xinyu

doi:10.13801/j.cnki.fhclxb.20210913.001

Volume 39 Issue 7

Jul. 2022

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QIN Yafei, ZENG Yu, WANG Dong, et al. Bonding and strain behavior of graphene/boron nitride diaphragm of micro-electro-mechanical system pressure sensor[J]. Acta Materiae Compositae Sinica, 2022, 39(7): 3330-3338. doi: 10.13801/j.cnki.fhclxb.20210913.001

Citation:

QIN Yafei, ZENG Yu, WANG Dong, et al. Bonding and strain behavior of graphene/boron nitride diaphragm of micro-electro-mechanical system pressure sensor[J]. Acta Materiae Compositae Sinica, 2022, 39(7): 3330-3338. doi: 10.13801/j.cnki.fhclxb.20210913.001

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Bonding and strain behavior of graphene/boron nitride diaphragm of micro-electro-mechanical system pressure sensor

doi: 10.13801/j.cnki.fhclxb.20210913.001

The Faculty of Mechanical and Electrical Engineering, Kunming University of Science and Technology, Kunming 650093, China

Received Date: 2021-07-08
Accepted Date: 2021-08-24
Rev Recd Date: 2021-08-22

Available Online: 2021-09-13

Publish Date: 2022-07-30

Abstract

Abstract

The van der Waals heterostructure composed of a vertical stack of graphene and hexagonal boron nitride (h-BN) layered materials is an ideal model for manufacturing high-quality graphene devices. A new type of pressure sensor structure was proposed, using graphene/h-BN heterostructure on Si/SiO₂ substrate as a pressure sensitive film. Through the method of molecular dynamics simulation, the stress-strain relationship between graphene and graphene/h-BN heterostructure was obtained from the molecular atomic level. It is found that the elastic modulus of single-layer graphene is about 907 GPa, and as the temperature increasing higher, the elastic modulus value will become smaller. Furthermore, the mechanical properties and temperature characteristics of the graphene/h-BN heterostructure were analyzed, and the elastic modulus of the heterostructure is 1343 GPa. The mechanical parameters of the heterostructure are less sensitive to temperature than graphene. Secondly, according to density functional theory and CASTEP, the energy change of graphene/h-BN heterostructure bonding and the geometric optimization of three different configurations were analyzed, and the AB type (One carbon is on the nitrogen, the other is on the center of hexagonal boron nitride) is the optimal configuration, and the maximum band gap opening is 3.803 eV. The band structure and density of states of this configuration were calculated. These results provide a certain theoretical basis and basis for the design and manufacture of graphene/h-BN heterostructure pressure sensors.
- heterostructure,
- pressure sensor,
- molecular dynamics simulation,
- density functional theory,
- energy change
Long Abstrsct
Innovation Points

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References(38)

References

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