HAN Zhaohui, ZHOU Shenggang, ZHU Peixian, et al. Electronic structure of phase interface diffusion reaction layer of Ti-Al laminar composites[J]. Acta Materiae Compositae Sinica, 2014, 31(5): 1350-1356.
Citation: HAN Zhaohui, ZHOU Shenggang, ZHU Peixian, et al. Electronic structure of phase interface diffusion reaction layer of Ti-Al laminar composites[J]. Acta Materiae Compositae Sinica, 2014, 31(5): 1350-1356.

Electronic structure of phase interface diffusion reaction layer of Ti-Al laminar composites

  • Received Date: 2013-09-18
  • Rev Recd Date: 2013-11-27
  • Publish Date: 2014-10-15
  • Ti-Al laminar composites were prepared by hot-pressing diffusion bonding method.Hot-pressing diffusion bonding was conducted under different bonding temperature conditions, and the reaction products and electronic structure features of the diffusion reaction layer of Ti-Al diffusion couple were texted by SEM, EDS, XRD and first-principle based on density functional theory (DFT).The results show that when the bonding temperature is not less than 560 ℃, the main reaction products of the phase interface diffusion reaction layer of Ti-Al diffusion couple are intermetallic compound Al3Ti.The pseudo gap of total density of state (TDOS) of Al3Ti is 2.8 eV, and the pseudo gap of partial density of state (PDOS) of adjacent Al and Ti atom is also 2.8 eV, the covalent bond of intermetallic compound Al3Ti is less, but the metal bond is more.Therefore, Al3Ti shows more metal characteristics, and it has good electrical conductivity, which is a basis as a novel electrode material for Ti-Al laminar composites.

     

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      沈阳化工大学材料科学与工程学院 沈阳 110142

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