ZHU Gucheng, HU Boping, WAN Meiqian, et al. Preparation and properties characterization of Al2O3 doping BaTi0.85Sn0.15O3 ceramics[J]. Acta Materiae Compositae Sinica, 2018, 35(3): 647-652. doi: 10.13801/j.cnki.fhclxb.20170519.003
Citation: ZHU Gucheng, HU Boping, WAN Meiqian, et al. Preparation and properties characterization of Al2O3 doping BaTi0.85Sn0.15O3 ceramics[J]. Acta Materiae Compositae Sinica, 2018, 35(3): 647-652. doi: 10.13801/j.cnki.fhclxb.20170519.003

Preparation and properties characterization of Al2O3 doping BaTi0.85Sn0.15O3 ceramics

doi: 10.13801/j.cnki.fhclxb.20170519.003
  • Received Date: 2017-03-14
  • Rev Recd Date: 2017-05-08
  • x wt% Al2O3(x=0, 1.0, 1.5)/BaTi0.85Sn0.15O3(BTS) ceramics were prepared by the traditional secondary solid state reaction method. And the effects of BTS ceramics doped with Al2O3 on the microstructure, dielectricity and flexoelectricity were studied. The results show that BTS ceramics doped with Al2O3 are still the standard perovskite crystal structure, Al2O3 reduces the size of the grain effectively. When Al2O3 doping amount increases, the dielectric constant of Al2O3/BTS ceramics decreases, the dielectric loss of Al2O3/BTS ceramics decreases, the Curie peaks broaden and shift to the high temperature direction. With the increase of Al2O3 content and test temperature, the flexoelectric coefficient of Al2O3/BTS ceramics decreases.And there is a near linear relationship between the coefficient of deflection and dielectric constant of Al2O3/BTS ceramics, but when the temperature is very close to the Curie temperature, the linear relationship is weakened.

     

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