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SiC复合吸波材料的研究进展

邢原铭,  杨涛,  王恩会,  刘成,  侯新梅

文章导航 > 复合材料学报  > 2023 > 优先出版
邢原铭, 杨涛, 王恩会, 等. SiC复合吸波材料的研究进展[J]. 复合材料学报, 2023, 41(0): 1-13
引用本文: 邢原铭, 杨涛, 王恩会, 等. SiC复合吸波材料的研究进展[J]. 复合材料学报, 2023, 41(0): 1-13
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Yuanming XING, Tao YANG, Enhui WANG, Cheng LIU, Xinmei HOU. Research progress of SiC composite microwave absorbing materials[J]. Acta Materiae Compositae Sinica.
Citation: Yuanming XING, Tao YANG, Enhui WANG, Cheng LIU, Xinmei HOU. Research progress of SiC composite microwave absorbing materials[J]. Acta Materiae Compositae Sinica.
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SiC复合吸波材料的研究进展

  • 1.

    北京科技大学碳中和研究院, 北京 100083

  • 2.

    马鞍山钢铁股份有限公司技术中心, 安徽马鞍山 243003

基金项目: 国家杰出青年科学基金(52025041)；国家自然科学基金(51902020；51974021；52250091)
详细信息
    通讯作者:

    杨涛，博士，特聘教授，博士生导师，研究方向为无机非金属材料、低维材料的可控合成与功能化；冶金电化学　E-mail: yangtaoustb@ustb.edu.cn

  • 中图分类号: TB332;TB34

Research progress of SiC composite microwave absorbing materials

  • 1.

    Institute for Carbon Neutrality, University of Science and Technology Beijing, Beijing 100083, China

  • 2.

    Technical Center, Maanshan Iron and Steel Co., Ltd., Maanshan Anhui 243003, China

Funds: National Science Foundation for Distinguished Young Scholars (No. 52025041); National Natural Science Foundation of China (No.51902020; 51974021; 52250091)

    摘要
  • 摘要:   目的  吸波材料作为防雷达探测、电磁干扰和电磁污染的有效屏障得到了快速的发展。SiC是一种应用广泛的吸波材料，其具有一定的介电性能和出众的稳定性、耐腐蚀性，但也存在阻抗匹配不佳等缺点。构建SiC基复合吸波材料是提高其吸波性能的重要方法。本文综述了SiC的吸波性能和SiC基复合吸波材料的研究进展，并展望了SiC基复合吸波材料的发展方向。  方法  对SiC及其复合吸波材料的制备与性能进行归纳总结：(1)SiC的吸波性能和提高吸波性能的方法。SiC吸波材料主要依赖于介电损耗，内部缺陷、界面和表面、厚度和温度等因素会影响SiC的吸波性能。为克服SiC材料阻抗匹配不佳、损耗机制单一等不足，常用的方法有：掺杂改性和制备SiC复合材料。(2)SiC复合材料的制备策略：零维SiC纳米颗粒、一维SiC纳米线、三维结构SiC材料分别与导电材料、介电材料和磁性材料相复合，以提高SiC基材料的介电性能、丰富吸收机制、优化阻抗匹配，进而提高吸波性能。  结果  SiC的吸波性能主要来自于介电弛豫损耗，并受到内部缺陷、界面和表面、厚度和温度的影响：SiC内部缺陷作为极化中心引起极化弛豫，提高介电常数；SiC的比表面积增大，会增加偶极极化和界面极化，促进多次反射；吸收体厚度为1/4波长的奇数倍时会产生干涉而衰减电磁波；温度的升高会降低SiC电阻率，进而提高其对电磁波吸收率。为提高SiC的吸波性能，可采用掺杂改性和制备SiC复合材料的  方法  对SiC的掺杂改性可以调控载流子浓度、提高介电性能；SiC复合吸波材料可以调节电磁参数、优化阻抗匹配、丰富损耗机制，提高吸收强度。不同维度的SiC用于吸波材料的优势有：SiC纳米颗粒抗氧化性能更好，更耐高温，纳米颗粒有效改善了SiC的电磁特性且制备方法较为成熟；SiC纳米线具有一维结构，比表面积较大，易于形成三维导电网络，具有较高的介电性能；三维SiC材料可通过不同的实验方法制备，多孔网络结构对电磁波产生反射、散射、干涉作用引起衰减。按照损耗类型分类，SiC复合材料主要分为三类：SiC与导电材料复合、SiC与介电材料复合、SiC与磁性材料复合。①导电材料以碳材料为代表，具有导电性高、密度小、稳定性好、易于调控的优势。导电材料与SiC相复合，促进了异质界面的形成，引入了导电路径，可以丰富损耗机制，优化阻抗匹配。②介电材料包括各种陶瓷材料，大多具有较高的力学性能和耐腐蚀性能。介电材料与SiC相复合，可以调控材料的介电性能，进一步提高介电损耗，并有在高温下服役的潜力。③磁性材料包括金属微粉和金属氧化物等，通过涡流损耗和自然共振等方式进行磁损耗，有些磁性材料也同时具备介电损耗，具有很高的吸波特性。磁性材料与SiC相复合，可以丰富损耗机制，提高吸波性能。  结论  本文综述了SiC复合吸波材料的最新研究进展：介绍了SiC的结构、吸波机理和影响因素，并根据SiC材料维度和损耗机理对复合材料进行分类总结和分析。最后对SiC基复合吸波材料的发展前景进行了展望，这为SiC基复合吸波材料的研究提供参考。

     

    Abstract: In order to prevent the increasingly serious electromagnetic interference problem, the research and development of microwave absorbing materials has attracted more and more attention. As a microwave absorbing material with excellent dielectric properties, SiC also has the advantages of excellent stability, high strength and corrosion resistance. But it also has the disadvantages of poor impedance matching and single microwave absorbing mechanism. Compounding SiC with other materials is an important means to further improve the microwave absorbing properties of SiC materials. The structure, microwave absorbing mechanism and influencing factors of SiC were briefly introduced in the paper. Then the microwave absorbing properties of SiC composites with different dimensions were summarized in detail, including SiC nanoparticles, SiC nanowires, three-dimensional SiC materials with different kinds of materials such as metallic materials, carbon materials, ceramic materials, and polymer materials. Compared with a single SiC material, the composite materials can improve their dielectric properties, enrich the absorption mechanism, optimize the impedance matching, and then improve the microwave absorption ability. Finally, the development direction of SiC based composite microwave absorbing materials was prospected.

     

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  • 图  1  (a,b)SiC原子结构；(c-e)常见的SiC结构示意图[9]

    Figure  1.  (a,b)Atomic structure of SiC; (c-e) Schematic diagram of common SiC structure[9]

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    图  2  吸波材料的基本机制

    Figure  2.  Basic mechanism of absorbing materials

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    图  3  纳米SiC@C复合粒子的(a)TEM图像和(b)高倍率TEM图像[25]

    Figure  3.  (a)TEM images and (b)high magnification TEM images of SiC@C composite nanoparticles[25]

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    图  4  退火温度为1650℃(a)和1800℃(b)时，匹配厚度为2或1.5-4 mm的范围内，退火态SiBCN的吸波性能[27]；(c)匹配厚度为3 mm的SiOC和n-SiC/SiOC的吸收系数[29]

    Figure  4.  The RC of the as-annealed SiBCN at 1650℃ (a) and 1800℃ (b) as a function of frequency at a matching thickness range of 2 or 1.5–4 mm[27]; (c) Absorption coefficients of SiOC and n-SiC/SiOC with a matching thickness of 3 mm[29]

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    图  5  (a),(b)：Fe3O4 / rGO复合材料与SiC/Fe3O4/rGO复合材料吸波性能的对比[30]

    Figure  5.  (a),(b): Reflection loss diagram of Fe3O4/rGO, SiC/Fe3O4/rGO[30]

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    图  6  (a)单个竹节状SiC纳米线TEM图像; (b)竹节处对应的HRTEM图像；(c)匹配厚度为2.0 mm和2.5 mm时材料的RL值[33]

    Figure  6.  (a)TEM images of a single nanowire, and (b) is the HRTEM images of bamboo joint region; (c)RL values of nanowires-paraffin composite with the matching thickness of 2.0 mm and 2.5 mm[33]

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    图  7  SiC纳米线低放大TEM图像(a)、高放大TEM图像(b)、(c)为(b)中划出区域的HRTEM图像；(d),(e)为对应(c)中含缺陷1和无缺陷2区的FFT衍射图[37]； SiCnws(f)和SiC@石墨烯(g)的SEM图像、SiCnws(h)和SiC@石墨烯(i)的TEM图像；(j)不同厚度SiC@石墨烯的RL值[42]

    Figure  7.  SiC nanowires low-magnified TEM image (a), high-magnified TEM image (b) showing high-density stacking faults and micro-twins within nanowires, (c)HRTEM image recorded from the white square area in (b), (d) and (e) corresponding the FFT diffraction patterns obtained from defect-containing (1) and defect-free (2) regions in(c), respectively[37]; SEM images of SiC NWs (f) and SiC@graphene (g); TEM images of SiC NWs (h) and SiC@graphene (i), the insets are corresponding HRTEM images; (j) RL values at the various thicknesses [42]

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    图  8  (a)SiC纳米线上珠状SiO2的SEM图像[45]；(b)SiC/SiO2核壳纳米线结构和吸波机制图[48]

    Figure  8.  (a) SEM image of beaded SiO2 on SiC nanowires[45]; (b) Structure and wave absorption schematic diagram of SiC/SiO2 core-shell nanowires[48]

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    图  9  (a,b)包埋法制备的BC/SiC复合材料的SEM照片[54]；(c)S-1300、S-1400、S-1500的RL三维表征[55]

    Figure  9.  (a,b): SEM images of BC/SiC composites by investing Method; (c) Three-dimensional presentations of RL of as-prepared S-1300, S-1400 and S-1500[55]

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    图  10  两种不同组分气凝胶的微观结构：(a)SiC/Si3N4复合气凝胶[64]；(b)SiC/C复合气凝胶[65]

    Figure  10.  Microstructure of two aerogels with different components: (a) SiC/Si3N4 composite aerogels[64]; (b) SiC/C composite aerogel[65]

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  • 收稿日期:  2023-03-01
  • 修回日期:  2023-03-31
  • 录用日期:  2023-04-21
  • 网络出版日期:  2023-05-06

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