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SiCf/TC18复合材料界面热稳定性及元素扩散规律

陈维龙 张育铭 杨青 姚红蕊 王玉敏

陈维龙, 张育铭, 杨青, 等. SiCf/TC18复合材料界面热稳定性及元素扩散规律[J]. 复合材料学报, 2024, 41(11): 6091-6100.
引用本文: 陈维龙, 张育铭, 杨青, 等. SiCf/TC18复合材料界面热稳定性及元素扩散规律[J]. 复合材料学报, 2024, 41(11): 6091-6100.
CHEN Weilong, ZHANG Yuming, YANG Qing, et al. Interface thermal stability and element diffusion law of SiCf/TC18 composites[J]. Acta Materiae Compositae Sinica, 2024, 41(11): 6091-6100.
Citation: CHEN Weilong, ZHANG Yuming, YANG Qing, et al. Interface thermal stability and element diffusion law of SiCf/TC18 composites[J]. Acta Materiae Compositae Sinica, 2024, 41(11): 6091-6100.

SiCf/TC18复合材料界面热稳定性及元素扩散规律

基金项目: 基础加强计划重点基础研究项目(TMC-00-02)
详细信息
    通讯作者:

    杨青,硕士,高级工程师,硕士生导师,研究方向为金属基复合材料 E-mail:qingyang@imr.ac.cn

    王玉敏,博士,研究员,博士生导师,研究方向为金属基复合材料 E-mail:yuminwang@imr.ac.cn

  • 中图分类号: TG146.23;TB331

Interface thermal stability and element diffusion law of SiCf/TC18 composites

Funds: Key basic research projects of foundation strengthening plan (No. TMC-00-02)
  • 摘要: 界面反应会对钛基复合材料的力学性能产生显著影响,为确定SiCf/TC18复合材料的元素扩散及界面反应层长大规律,采用磁控溅射先驱丝法+热等静压工艺制备了SiCf/TC18复合材料,并在不同温度(400、600、800 ℃)和时间(50、100、150、200 h)下进行热暴露实验,分析了热等静压态和热暴露态SiCf/TC18复合材料的界面反应层厚度变化、元素分布及扩散规律。更为重要的是,本文阐明了元素互扩散的机制,总结了界面反应层厚度随热暴露时间的长大规律,揭示了SiCf/TC18复合材料界面反应层产物主要为TiC。经计算,SiCf/TC18复合材料界面指数因子为4.0 × 10−6 m/s1/2,反应层长大激活能为80.31 kJ/mol,该材料在400 ℃以下时界面热稳定性优异。

     

  • 图  1  SiCf/TC18复合材料先驱丝横截面SEM图像及EDS元素扫描选取的位置

    Figure  1.  Cross section SEM image of SiCf/TC18 composites precursor wire and selected positions for EDS element scanning

    图  2  SiCf/TC18复合材料热等静压态整体及界面组织形貌

    Figure  2.  Overall and interface morphology of SiCf/TC18 composites in hot isostatic pressing state

    图  3  SiCf/TC18复合材料热等静压态界面区域SEM像(a)和EPMA元素面分布图(b-i)

    Figure  3.  SEM image(a) and EPMA element maps of the hot isostatic pressing interface region(b-i) of SiCf/TC18 composites

    图  4  SiCf/TC18复合材料不同热暴露条件下的界面反应层形貌

    Figure  4.  Morphology of interface reaction layer in SiCf/TC18 composites at different heat exposure conditions

    图  5  SiCf/TC18复合材料热等静压态与200 h热暴露实验后的EBSD图像

    Figure  5.  EBSD images of SiCf/TC18 composites in hot isostatic pressing state and after 200 h heat exposure experiment

    图  6  SiCf/TC18复合材料800℃/200 h热暴露态SEM像和EPMA元素面分布图

    Figure  6.  SEM image(a) and EPMA element maps in heat exposure(b-i) of SiCf/TC18 composites at 800℃/200 h

    图  7  EPMA元素扫描选取位置

    Figure  7.  Schematic diagram of EPMA point scanning positions

    图  8  SiCf/TC18复合材料热等静压态XRD图谱

    Figure  8.  XRD pattern of SiCf/TC18 composites in hot isostatic pressing

    图  9  SiCf/TC18复合材料在不同热暴露条件下的XRD图谱

    Figure  9.  XRD pattern of SiCf/TC18 composites under different thermal exposure conditions

    图  10  SiCf/TC18复合材料各元素热压及热暴露过程中元素扩散示意图

    Figure  10.  Schematic diagram of element diffusion during hot pressing and exposure of SiCf/TC18 composites

    图  11  SiCf/TC18复合材料界面反应动力学曲线

    Figure  11.  Interfacial reaction kinetic curves of SiCf/TC18 composites

    图  12  SiCf/TC18复合材料反应层长大Arrhenius关系图

    Figure  12.  Arrhenius diagram of the interfacial reaction layer growth in SiCf/TC18 composites

    表  1  SiCf/TC18复合材料先驱丝EDS元素定量分析结果

    Table  1.   Quantitative analysis results of EDS elements in SiCf/TC18 composites precursor wire (Mass fraction/%)

    PositionCSiTiAlMoVFeCrTotal
    144.2255.350.200.080.080.030.020.02100.00
    278.0221.540.350.050.000.030.000.01100.00
    37.500.1776.584.314.375.201.010.86100.00
    47.260.1777.344.544.164.870.900.76100.00
    58.020.1476.454.534.274.930.920.74100.00
    下载: 导出CSV

    表  2  SiCf/TC18复合材料热暴露后的界面反应层厚度

    Table  2.   The thickness of the interface reaction layer of SiCf/TC18 composites after heat exposure

    Temperature /℃ Thickness of interfacial reaction layer / μm
    50 h 100 h 150 h 200 h
    400 0.61±0.26 0.61±0.27 0.61±0.32 0.61±0.26
    600 0.62±0.17 0.64±0.21 0.65±0.33 0.67±0.25
    800 1.28±0.30 1.48±0.37 1.62±0.39 1.90±0.29
    下载: 导出CSV

    表  3  SiCf/TC18复合材料热等静压态与200 h热暴露实验后的晶粒尺寸大小

    Table  3.   Grain size of SiCf/TC18 composites in hot isostatic pressing state and after 200 h heat exposure experiment

    Temperature /℃ Grain size /μm2
    α phase β phase Overall size
    RT 0.30 0.14 0.22
    400 0.37 0.28 0.33
    600 0.48 0.30 0.39
    800 1.02 1.24 1.12
    下载: 导出CSV

    表  4  SiCf/TC18复合材料元素原子半径

    Table  4.   Element atomic radius of SiCf/TC18 composites

    Element symbolCSiTiAlMoVFeCr
    Atomic radius/nm0.0770.1340.1440.1430.1390.1320.1240.128
    下载: 导出CSV

    表  5  热等静压态反应层EPMA元素定量分析结果

    Table  5.   Quantitative analysis results of EPMA elements in the reaction layer of hot isostatic pressing state (Mass fraction/%)

    PositionCSiTiAlMoVFeCrTotal
    131.675.0059.970.841.010.990.210.31100.00
    223.682.9467.751.591.671.480.380.51100.00
    317.511.6471.182.522.972.530.770.88100.00
    下载: 导出CSV

    表  6  热暴露态800℃/200 h反应层EPMA元素定量分析结果

    Table  6.   Quantitative analysis results of EPMA elements in the reaction layer at 800℃/200 h under thermal exposure (Mass fraction/%)

    PositionCSiTiAlMoVFeCrTotal
    120.982.4876.070.070.040.330.010.02100.00
    212.450.3286.570.210.040.390.010.01100.00
    310.130.1887.181.540.260.620.030.06100.00
    下载: 导出CSV
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  • 收稿日期:  2023-12-22
  • 修回日期:  2024-01-28
  • 录用日期:  2024-02-03
  • 网络出版日期:  2024-03-27
  • 刊出日期:  2024-11-15

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