High efficiency inorganic perovskite solar cells prepared by CoI2 inhibited interfacial non-radiation recombination
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摘要: 无机钙钛矿太阳电池(Inorganic perovskite solar cells, IPSCs)因其优异的光、热稳定性引起了广泛关注。然而，由于界面处非常严重的非辐射复合，IPSCs往往面临着非常巨大的开路电压(VOC)损失。为解决这一问题，本文提出利用无机材料碘化钴(CoI2)抑制界面非辐射复合，在不引入有机材料的前提下增强IPSCs的光伏性能，实现界面缺陷的有效管理，降低非辐射复合，最终，基于CoI2界面处理的空气环境下制备的IPSCs实现了19.50%的光电转换效率，VOC损失仅仅为447 mV且稳定性优异，为有效降低IPSCs的VOC损失提供了新策略。Abstract: Inorganic perovskite solar cells (IPSCs) have attracted considerable attention due to their excellent light and thermal stability. However, IPSCs usually face extremely large open circuit voltage (VOC) deficits due to severe non-radiative recombination at the interface. To solve this issue, this research proposes to use inorganic material cobalt iodide (CoI2) to inhibit interface non-radiative recombination, enhance the photovoltaic performance of IPSCs without introducing organic materials, achieve effective management of interface defects, reduce non-radiative recombination. IPSCs prepared in air environment based on CoI2 interface treatment achieved a photoelectric conversion efficiency of 19.50%, and VOC loss was only 447 mV with excellent stability, providing a new strategy for effectively reducing VOC deficits of IPSCs.
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图 1 (a)无机钙钛矿薄膜制备流程图，(b) Control样品SEM形貌示意图，(c) CoI2处理样品SEM形貌示意图，(d)粒径尺寸统计分布图
Figure 1. (a) Preparation flow chart of inorganic perovskite film, (b) SEM morphology of control sample, (c) SEM morphology of COI2-treated sample, (d) statistical distribution diagram of particle size
图 2 (a) CoI2的作用机制示意图，(b) IPSCs器件结构示意图，(c) IPSCs的J-V测试曲线及光伏性能参数，(d) EQE测试曲线，(e)稳态功率输出(SPO)效率测试曲线
Figure 2. (a) Schematic diagram of the action mechanism of CoI2, (b) schematic diagram of IPSCs device structure, (c) J-V test curve of IPSCs and photovoltaic performance parameters, (d) EQE test curve, (e) steady-state power output (SPO) efficiency test curve
图 3 CoI2处理前后IPSCs光伏性能参数分布统计图
Figure 3. Statistical distribution of photovoltaic performance parameters of IPSCs devices before and after CoI2 treatment
图 4 (a) TRPL测试曲线，(b) Control器件的SCLC测试曲线，(c) CoI2处理器件的SCLC测试曲线，(d)暗态J-V测试曲线，(e) EIS测试曲线，(f) C-V测试曲线
Figure 4. (a) TRPL test curve, (b) SCLC test curve of control device, (c) SCLC test curve of CoI2 treated device, (d) dark state J-V test curve, (e) EIS test curve, (f) C-V test curve
图 5 (a) Control薄膜水接触角测试光学照片，(b) CoI2处理薄膜水接触角测试光学照片，(c)湿度稳定性测试，(d) 65℃热稳定性测试
Figure 5. (a) Optical photos of water contact Angle test of the control film, (b) optical photos of water contact Angle test of the CoI2 treated film, (c) humidity stability test, (d) thermal stability test at 65℃
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