Advances in flexible wearable bismuth telluride-based materials thermoelectric devices
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摘要: 随着全球能源的消耗加剧,热电器件的开发应用成为解决能源消耗问题的有效途径之一,其中,碲化铋(Bi2Te3)基柔性热电器件因在可穿戴领域逐步实现应用,得到了学界和业界的广泛关注。然而,受其材料成本较高、刚性结构等多方面因素的限制,Bi2Te3基柔性热电器件难以在保持高效热电性能的同时,实现柔性可穿戴化应用。本文系统地阐述了当前Bi2Te3基柔性热电器件在材料复合与柔性结构设计上的研究进展,特别是在柔性结构设计上,涵盖了块状、膜类及纱线型3种结构。最后,总结分析了Bi2Te3柔性热电器件未来可能面临的挑战与发展趋势,以期促进热电器件在可穿戴领域实现广泛应用。Abstract: As the global energy consumption increasing rapidly, development and application of thermoelectric devices have become one of the effective ways to solve the problem. Among them, bismuth telluride (Bi2Te3)-based flexible devices attract widespread attention because they have been applied in the wearable sector gradually. However, due to the limitations of high material cost, rigid structure, and other factors, it is difficult for Bi2Te3-based flexible thermoelectric devices to achieve flexible wearable applications while maintaining efficient thermoelectric properties. This paper systematically reviews the current research progress of Bi2Te3-based flexible thermoelectric devices in terms of material composites and flexible structure design, especially in terms of flexible structure design, which covers three types of structures: Ingot-, film- and yarn- shaped. Finally, it summarizes and analyzes the possible future challenges and development trends of Bi2Te3-based flexible thermoelectric devices, to facilitate the realization of a wide range of applications for thermoelectric devices in the wearable field.
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图 3 (a) 柔性热电发电机(f-TEG)的制造工艺[20];(b) TEG实样图[46];(c) 热电器件结构图[44];(d) 中空结构器件结构图[45];(e) 中空结构器件在手指表面的弯曲图[45]
Figure 3. (a) Manufacturing process of f-TEG[20]; (b) TEG sample drawing[46]; (c) Structure of the TEG[44]; (d) Structure of the hollow structure device[45]; (e) Bending diagram of a hollow structure device on the surface of a finger[45]
RL—; WTEG—
表 1 Bi2Te3基热电器件应用总结
Table 1. Summary of Bi2Te3-based thermoelectric device applications
Device type Thermoelectric
materialsSubstance* Input voltage/mV Power factor/
(μW·m−1·K−2)Power density/
(µW·cm−2)Seebeck
coefficient/
(μV·K−1)Ref. Flexible ingot-
shaped thermoelectric devicesSWCNT
Bi2Te3— 23 (135 K) 891.6 (340 K) — — [16] Bi0.5Te1.5Te3
(P-type)
Bi2Te2.8Se0.2
(N-type)PIF 2800-3300
(Body temperature)— 3.5 — [20] Bi0.5Sb1.5Te3
(P-type)
Bi2Se0.3Te2.7
(N-type)FPCB 63 — 8.68 — [44] Bi0.5Sb1.5Te3
(P-type)
Bi2Se0.5Te2.5
(N-type)FPCB 5.35 — 4.75 — [45] CNTs
P, N Bi2Te3PDMS 920 — 570 — [46] Flexible film-
shaped thermoelectric devicesBi2Te3
PVDFPET 2.3
(Natural exhalation)133 (P)
124 (N)— — [6] N bismuth telluride (Graphene)
P bismuth telluride
(SWCNT)Polyimide
(PI)23 (135 K) 55 (P)
108 (N)— — [30] Bi2Te3
PEDOT:PSS
DMSO— — — — 45±2.1 [40] Bi2Te3 AIN — 1130 — — [48] Bi2Te3 MASnI3 — — — — [49] Bi2Te3 PIF 155.1
(46℃)— 2530 — [55] Bi0.4Sb1.6Te3
(P-type)
Bi2Se0.3Te2
(N-type)PIF 55.15
(AM 1.5 G)— — 166.37 (P)
−116.38 (N)[56] Bi2Te3 Ecoflex — — 150 — [57] Flexible yarn-
shaped thermoelectric devicesBi2Te3
PVP— — — — 3062 [32] Bi2Te3-
Sb2Te3-PAN— 15.8, 14.8,
11.9— 62, 11, 9 — [58] Bi0.4Sb1.3Te3
(P-type)
Bi2Te3.3Se0.2
(N-type)Polyimide filament
PDMS— — 58 — [59] Bi2Te3 Extreme filaments
PEDOT— — 613 (25 K) — [60] Notes: Input voltage is the voltage produced by a device at a certain temperature; Power factor is the ratio of the power dissipated to the product of the input volts times amps; Power density is the power generated per square centimeter of the TEG; Seebeck coefficient is defined as follows: S=−ΔV/ΔT with S being the Seebeck coefficient, ΔT the temperature difference between the ends of the material, and ΔV the potential difference; PEDOT—Poly(3, 4-ethylenedioxythiophene; PVP—Polyvinyl pyrrolidone; DMSO—Dimethyl sulfoxide; SWCNT—Single-walledcarbon nanotubes; PDMS—Polydimethylsiloxane; PIF—Polyimide film; PVDF—Polyvinylidene fluoride; PET—Polyethyleneterephthalate; FPCB—Flexible printedcircuit board; CNTs—Carbon nanotubes; PAN—; PSS—; MASnI3—. -
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