CuxO用于调控全无机碳基CsPbI2Br钙钛矿太阳能电池的界面性能

孙北; 郑申申; 迟文晖; 陈康来; 张翔; 徐坤宇; 陈华梅; 谢亚红

doi:10.13801/j.cnki.fhclxb.20221213.002

Cu_xO用于调控全无机碳基CsPbI₂Br钙钛矿太阳能电池的界面性能

doi: 10.13801/j.cnki.fhclxb.20221213.002

孙北^{1, 孙},
郑申申^{2, 孙},
迟文晖¹,
陈康来¹,
张翔¹,
徐坤宇¹,
陈华梅¹,
谢亚红^1, ,

1.
新疆大学　化工学院，石油天然气精细化工教育部/自治区重点实验室，乌鲁木齐 830046
2.
西南石油大学　新能源与材料学院，成都 610599

基金项目: 新疆大学2021年自治区级大学生创新训练计划项目(20191003209)；国家自然科学基金(52162035)

详细信息

通讯作者:
谢亚红，博士，教授，硕士生/博士生导师，研究方向为光电转化与储存材料的设计合成与综合利用　E-mail: xyh0707@xju.edu.cn

孙北、郑申申为共同第一作者，对本文具有同等效力
中图分类号: TB332
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出版历程
- 收稿日期: 2022-10-19
- 修回日期: 2022-11-10
- 录用日期: 2022-12-01
- 网络出版日期: 2022-12-14
- 刊出日期: 2023-05-15

Improved interface performance of all inorganic carbon based CsPbI₂Br perovskite solar cells using Cu_xO

SUN Bei^{1, 孙},
ZHENG Shenshen^{2, 孙},
CHI Wenhui¹,
CHEN Kanglai¹,
ZHANG Xiang¹,
XU Kunyu¹,
CHEN Huamei¹,
XIE Yahong^{1
, ,}

1.
Key Laboratory of Oil & Gas Fine Chemicals, Ministry of Education and Xinjiang Uyghur Autonomous Region, College of Chemical Engineering, Xinjiang University, Xinjiang 830046, China
2.
School of New Energy and Materials, Southwest Petroleum University, Chengdu 610599, China

Funds: Xinjiang University's 2021 Autonomous Region Level Innovation Training Program for College Students (20191003209); National Natural Science Foundation of China (52162035)

摘要

摘要: CsPbI₂Br基的全无机钙钛矿太阳能电池由于碳电极与钙钛矿的接触性较差和能带不匹配等原因，导致其光电转换效率不高。无机空穴传输材料成本低、迁移率高、稳定性好，可有效提升界面性能，非常适合于全无机CsPbI₂Br钙钛矿太阳能电池的优化改性。本文采用简单的葡萄糖还原法结合煅烧技术制备了两种不同形貌和结构的规则八面体构型CuO和Cu₂O，将之作为无机空穴传输材料，制备了结构为FTO/SnO₂/CsPbI₂Br/Cu_xO/C的碳基钙钛矿太阳能电池，研究了铜氧化物的形貌、结构对光电性能的影响机制。结果显示铜氧化物具有宽带隙、良好的化学稳定性和p型载流子输运性质等良好的性能，以之作为无机空穴传输材料，可有效增强CsPbI₂Br钙钛矿层与碳电极层之间的界面接触，改善载流子传输性能，减少电荷复合，延长光电子寿命。基于Cu₂O和CuO的CsPbI₂Br基C-PSC器件的最终光电转化效率分别为11.62%和13.22%，分别比对照空白器件的光电转化效率提高了19.5%和36.0%。该工作利用简单的方法和材料，为提高全无机碳基CsPbI₂Br钙钛矿太阳能电池的光电转化效率和稳定性提供了积极的策略。1合成的 Cu₂O(a)和 CuO(b)氧化物的 SEM 图；相应碳基 CsPbI₂Br 钙钛矿太阳能电池的 J-V 曲线(c)和 EIS 测试图(d)
- 无机钙钛矿太阳能电池 /
- Cu_xO /
- CsPbI₂Br /
- 转化效率 /
- 无机空穴传输材料
Abstract: All inorganic carbon-based CsPbI₂Br perovskite solar cells (C-PSCs) have lower photoelectric conversion efficiency due to poor contact performance and mismatch of energy band between carbon electrode and perovskite laye. In this paper, two kinds of regular octahedral Cu_xO with different morphologies and structures were prepared by a simple glucose reduction method combined with calcination technology. As inorganic hole transport materials, C-PSCs with the structure of conductive glass (FTO)/SnO₂/CsPbI₂Br/CuO/C were prepared and the influence of morphologies and structures on the photoelectric performance was studied. The results show that Cu_xO has good chemical stability and p-type carrier transport characteristics, which can effectively enhance the interface contact between CsPbI₂Br and carbon electrode, improve the carrier transport performance, reduce charge recombination, and extend the photoelectron life. The highest photoelectric conversion efficiency of CsPbI₂Br based C-PSCs devices based on Cu₂O and CuO is 11.62% and 13.22%, respectively, which is 19.5% and 36.0% higher than that of blank devices. In addition, by adding Cu₂O and CuO, the long-term stability of the device in the air is also significantly improved. This work has a certain significance for improving the performance of CsPbI₂Br based C-PSCs.
- inorganic perovskite solar cells /
- Cu_xO /
- CsPbI₂Br /
- conversion efficiency /
- inorganic hole transport material
注释:

1) 孙北、郑申申为共同第一作者，对本文具有同等效力

HTML全文

图 1 Cu_xO在煅烧前((a), (b))和煅烧后((c), (d))的 SEM图像

Figure 1. SEM images of Cu_xO before ((a), (b)) and after ((c), (d)) calcination

下载: 全尺寸图片幻灯片

图 2 Cu₂O和CuO的XRD图谱(a)和Raman图谱(b) ；Cu2p (c)和O1s (d)的XPS图谱

Figure 2. XRD patterns (a) and Raman spectra (b) of Cu₂O and CuO; XPS spectra of Cu2p (c) and O1s (d)

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图 3 (a) CsPbI₂Br薄膜的XRD图谱；Pb4f (b)、I3d (c)、Cs3d (d)的XPS图谱

Figure 3. (a) XRD patterns of CsPbI₂Br film; XPS spectra of Pb4f (b), I3d (c), Cs3d (d)

下载: 全尺寸图片幻灯片

图 4 分散在异丙醇(IPA)中不同浓度的Cu₂O和CuO作为空穴传输层(HTL)的太阳能电池光电转换效率

Figure 4. Power conversation efficiency of solar cells with Cu₂O and CuO as hole transport layer (HTL) at different concentrations in isopropyl alcohol (IPA)

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图 5 (a)莫特-肖特基图(电容(C⁻²)-电压)曲线；(b) 开路电压衰减(OCVD)曲线；(c)正反扫光电流密度-电压 (J-V)曲线；(d)暗态下的光电流密度-电压 (J-V)曲线；(e) 电化学阻抗谱(EIS)曲线和电路模拟图；(f)基于FTO/C和FTO/Cu_xO/C结构的导电率

V_oc—Open circuit voltage; R_s—Series resistance; R_rec—Charge recombination resistance; C—Capacitance; FTO—Conducting glass

Figure 5. (a) Mott-Schottky plot (Capacitance (C⁻²)-voltage); (b) Open circuit voltage decay (OCVD) curves; (c) Forward and reverse photocurrent density voltage (J-V) measurement; (d) Photocurrent density-voltage (J-V) curves under dark condition; (e) Electrochemical impedance spectroscopy (EIS) curves and circuit simulation diagram; (f) Conductivity based on FTO/C and FTO/Cu_xO/C structure

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图 6 (a)光电流密度(J_ph)曲线；(b) CsPbI₂Br PSC的J_ph/J_sat曲线；(c)器件的稳态电流密度输出； (d)稳态 PCE 输出曲线

Figure 6. (a) Photocurrent density J_ph curves; (b) J_ph/J_sat plots of CsPbI₂Br PSC; (c) Current density of steady-state output; (d) Steady-state PCE output

V_eff—Voltage effective value; J_ph—Photocurrent density; J_sat—Dark saturation current density

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图 7 ((a)~(c))缺陷密度曲线；(d)器件的稳定性测试

Figure 7. ((a)-(c)) Defect density curves; (d) Stability test of devices

V_TFL—Trap filling limit voltages

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表 1 CsPbI₂Br钙钛矿太阳能电池(PSCs)的光电性能参数

Table 1. Photovoltaic parameters of CsPbI₂Br perovskite solar cells (PSCs)

		V_oc/V	J_sc/(mA·cm⁻²)	FF	PCE/%	HI
Control	RS	1.21	13.60	0.59	9.72	0.34
Control	FS	1.18	12.68	0.50	7.50	0.34
Cu₂O	RS	1.22	14.95	0.64	11.62	0.16
Cu₂O	FS	1.16	14.90	0.57	9.80	0.16
CuO	RS	1.21	15.55	0.70	13.22	0.15
CuO	FS	1.19	15.41	0.61	11.21	0.15
Notes: RS—Reverse scan; FS—Forward scan; V_oc—Open-circuit voltage; J_sc—Short-circuit current density; FF—Fill factor; PCE—Power conversation efficiency; HI—Hysteresis index.

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