K离子掺杂调控NH4V4O10形貌以提高其储能性能

K+ Doping Modulates the Morphology of NH4V4O10 to Improve the Energy Storage Performance

  • 摘要: 近年来,钒酸铵(NH4V4O10)作为超级电容器正极材料引起人们广大兴趣。但钒酸铵基正极在实际应用中仍然面临循环过程中不可逆脱氨和结构坍塌的问题。电负性低于钒的金属离子可以与氧形成更强的化学键,这样的强结合力可以减轻结构畸变,因此金属阳离子掺杂有利于结构稳定。本研究在钛片上原位生长了钾掺杂钒酸铵(KNVO)纳米线阵列,通过改变K+的掺杂浓度调控NH4V4O10形貌,缩小层间距,增加氧空位,以补偿金属离子掺杂导致的比容量下降。在三电极体系下,所制备的KNVO电极在1 A/g电流密度下发挥出756 F/g的高比容量,在10 A/g下,8000次充放电循环后依然具有94.2%的高比电容保持率。此外,DFT计算表明,K离子掺杂也使得氧空位增加、电子结构优化和Na+迁移能力提高,这些空位不仅提供了额外的电子态,提高了电子传输能力,还增强了Na+的扩散途径,从而提高了离子传导性。因此,该KNVO被证明是超级电容器储能设备的理想候选材料。

     

    Abstract: Recently, ammonium vanadate (NH4V4O10) has attracted much interest as an anode material for supercapacitors. However, ammonium vanadate-based anodes still face the problems of irreversible deamination and structural collapse during cycling in practical applications. Metal ions with electronegativity lower than vanadium can form stronger chemical bonds with oxygen, and such strong bonding can mitigate structural distortion, thus metal cation doping is beneficial for structural stabilization. In this study, potassium-doped ammonium vanadate (KNVO) nanowire arrays were grown on titanium wafers, and the morphology of NH4V4O10 was modulated by varying the doping concentration of K+ to reduce the layer spacing and increase the oxygen vacancies to compensate for the decrease in the specific capacity due to the doping of metal ions. The prepared KNVO electrode exerted a high specific capacity of 756 F/g at 1 A/g current density and still had a high specific capacitance retention of 94.2% after 8000 Charge/Discharge cycles at 10 A/g among three electrode reaction system. In addition, DFT calculations showed that K-ion doping also led to an increase in oxygen vacancies, optimization of the electronic structure, and enhancement of Na+ mobility, and these vacancies not only provided additional electronic states and improved electron transport, but also enhanced the diffusion pathway of Na+, thus improving ionic conductivity. Therefore, the KNVO nanowires proved to be an ideal candidate for supercapacitor energy storage devices.

     

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