Influence of glass frit on high temperature properties and dielectric properties of Si3N4 modified boron phenolic resin composites
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摘要: 为了探究助熔剂对树脂基复合材料高温性能及微观结构的影响,以低熔点玻璃料(GF)为助熔剂,Si3N4颗粒为耐高温陶瓷填料,采用模压工艺制备GF-Si3N4改性高硅氧玻璃纤维增强硼酚醛树脂复合材料(GF-Si3N4/BPR),研究GF对复合材料高温性能及介电性能的影响。结果表明:引入的GF促进了复合材料表面液相的形成和陶瓷层的致密化,抑制了热氧对复合材料的进一步侵蚀,复合材料高温性能明显提高。1200℃处理后,其弯曲强度与纯树脂试样(BPR)和未添加GF的试样(Si3N4/BPR)相比,分别提高了81.3%和14.9%;质量烧蚀率分别降低了73.1%和55.1%。此外,在8.2 GHz下,复合材料的介电常数(ε)和损耗角正切值(tanδ)随温度的升高逐渐增大。而在800℃以上,生成的玻璃相有效遏制了树脂裂解产生的游离碳与孔洞、裂纹对材料介电性能的不利影响。所制备的复合材料具有优良的高温性能和介电性能,有望应用在高温透波领域。Abstract: To investigate effect of flux on properties and microstructure of resin matrix composites at elevated temperature, glass frit (GF) and Si3N4 modified high silica glass fiber reinforced boron phenolic resin composites (GF-Si3N4/BPR) were prepared via a compression molding technique using low melting point GF as flux and Si3N4 particles as high temperature resistant fillers. The influence of GF on the high temperature properties and dielectric properties of composites was studied. The results show that the introduced GF promotes the formation of liquid phase on the surface of composites and the densification of the ceramic layer, inhibiting erosion of composites by oxygen at elevated temperatures and significantly improving the high temperature performance of composites. The flexural strength of GF-Si3N4/BPR treated at 1200℃ was increased by 81.3% and 14.9%, respectively, compared with high silica glass fiber reinforced boron phenolic resin composites (BPR) and Si3N4 modified high silica glass fiber reinforced boron phenolic resin composites (Si3N4/BPR), while the mass ablation rate was reduced by 73.1% and 55.1%, respectively, compared with BPR and Si3N4/BPR. Furthermore, at 8.2 GHz, the dielectric constant (ε) and loss tangent (tanδ) of the composites gradually increased with increasing temperature. At temperatures above 800°C, the resulting glass phase effectively restrains the adverse effects of free carbon, pores, and cracks generated by resin cracking on the dielectric properties of the material. The prepared composite material has excellent high temperature properties and dielectric properties, and is expected to be applied in the field of high temperature wave transmission.
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图 3 1200℃处理后GF-Si3N4/BPR复合材料表面和断面微观形貌:((a), (c), (e)) BPR、Si3N4/BPR和10GF-Si3N4/BPR的表面;((b), (d), (f)) BPR、Si3N4/BPR和10GF-Si3N4/BPR的断面
Figure 3. Surface and cross-section micro-morphologies of GF-Si3N4/BPR composites treated at 1200℃: ((a), (c), (e)) Surfaces of BPR, Si3N4/BPR and 10GF-Si3N4/BPR; ((b), (d), (f)) Cross-sections of BPR, Si3N4/BPR and 10GF-Si3N4/BPR
表 1 低熔点玻璃料(GF)主要成分及含量
Table 1. Main components and contents of low melting point glass frit (GF)
wt% SiO2 K2O Na2O ZnO Al2O3 BaO TiO2 Bi2O3 P2O5 Fe2O3 52.04 16.26 8.43 5.68 0.44 4.33 9.24 2.96 0.13 0.10 表 2 GF-Si3N4/BPR复合材料配方
Table 2. GF-Si3N4/BPR composite formulations
Sample Mass ratio BPR Si3N4 GF BPR 100 0 0 Si3N4/BPR 100 30 0 5GF-Si3N4/BPR 100 30 5 10GF-Si3N4/BPR 100 30 10 15GF-Si3N4/BPR 100 30 15 20GF-Si3N4/BPR 100 30 20 Note: BPR—Boron phenolic resin. 表 3 GF-Si3N4/BPR复合材料的热分解特性
Table 3. Thermal decomposition properties of GF-Si3N4/BPR composites
Sample Tmax/℃ Residue yield/% 400℃ 600℃ 800℃ 1200℃ 1400℃ BPR 495.9 90.63 54.32 52.88 52.15 51.54 Si3N4/BPR 494.2 92.41 69.73 69.14 68.98 68.87 5GF-Si3N4/BPR 501.3 93.42 70.21 69.24 69.33 68.75 10GF-Si3N4/BPR 481.8 93.30 71.05 71.40 71.56 70.54 15GF-Si3N4/BPR 500.9 94.33 75.14 75.31 75.40 73.91 20GF-Si3N4/BPR 495.7 93.28 73.73 74.36 74.78 73.61 Note: Tmax—Temperature at which the thermal mass loss rate is the maximum. 表 4 不同温度处理后的GF-Si3N4/BPR复合材料电导率
Table 4. Conductivity of GF-Si3N4/BPR composites treated at different temperatures
Sample Conductivity/(10−10 S·m–1) RT 800℃ 1000℃ 1200℃ 1400℃ BPR 0.222 113 93.5 162 358 Si3N4/BPR 0.125 149 142 80 188 10GF-Si3N4/BPR 0.111 87 150 65.8 128 表 5 GF-Si3N4/BPR复合材料裂解玻璃碳的ID/IG值
Table 5. ID/IG values of pyrolyzed glassy carbon of GF-Si3N4/BPR composites
Sample ID/IG 800℃ 1400℃ BPR 2.717 2.403 Si3N4/BPR 3.236 2.364 10GF-Si3N4/BPR 3.663 2.326 Note: ID/IG—Intensity ratio of the D band to the G band. -
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