退火对CdS/SiO2介孔组装体系吸收边的影响

ANNEALING EFFECT ON THE ABSORPTION EDGE OF CdS/SiO2 MESOPOROUS ASSEMBLY

  • 摘要: 本文作者通过溶胶-凝胶法获得块材CdS纳米颗粒/介孔SiO2组装体系(CdS/SiO2)块体样品,室温下的拉曼谱中观察到CdS的两个特征峰;在氮气和空气气氛中退火处理后,发现吸收边位置随复合量和退火温度不同而移动。经计算,CdS颗粒粒径的理论值与其自由激子半径相当,说明吸收边的移动起因于量子限域效应。

     

    Abstract: Monolithic mesoporous CdS/SiO2 assembly systems were obtained by sol-gel technique. The characteristic peaks of CdS in Raman spectrum were observed at room temperature. The as-prepared samples were annealed under air and nitrogen, respectively. It is observed that the absorption edge of the CdS/SiO2 shifts in comparison with that of the bulk CdS as the annealing temperature change as well as the loading of CdS in SiO2. The calculating result showed that the size of CdS particles in the mesoporous SiO2 is similar to its exciton radius on quantity. The shift of the absorption edge was attributed to the quantum size effect.

     

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