SiC-B4C复合膜的制备及其力学和热电性能

PREPARATION OF SiC-B4C COMPOSITE FILM AND ITS MECHANICAL AND THERMOELECTRIC PROPERTIES

  • 摘要: 探索了 SiC-B4C复合膜的热等离子体 PVD(TPPVD)法快速制备,研究了 SiC-B4C复合膜的力学性能和热电性能。实验结果表明:以 SiC和 B4C超细粉为原料的热等离子体PVD(TPPVD)法是快速制备 SiC-B4C复合膜的有效方法。通过控制 SiC和 B4C粉末的供给,可以获得具有层状结构的 SiC-B4C致密优质复合膜,最大沉积速度达356 nm/s,高于常规 PVD和 CVD法两个数量级。膜的硬度随 B4C含量增加而增大,最大显微维氏硬度达到 35 GPa。SiC-B4C复合膜的电阻率和 Seebeck系数随 B4C含量增加而减小。最大 Seebeck系数为 550 μVK-1,在 973 K时最大功率因子达到640 μWm-1K-2,是SiC烧结体的21倍。

     

    Abstract: Preparation and mechanical and thermoelectric properties were studied for SiC-B4C composite films. The results show that thermal plasma PVD with SiC and B4C ultrafine powders as starting materials is a suitable method for the high-rate preparation of SiC-B4C composite films.The good qualified SiC-B4C composite films with a layer-by-layer structure were deposited at a maximum deposition rate of 356 nm/s. The micro Vickers hardness of the deposited films increases with the increasing of B4C content, and the maximum hardness of 35 GPa is obtained. The electrical resistivity and Seebeck coefficient decrease with the increasing of B4C content, and the maximum power factor at 973 K reaches 640 μWm-1K-2 which is 21 times that of sintered SiC.

     

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