Abstract: The 2D C/SiC plate seeded with the defects was manufactured by the chemical vapor infiltration (CVI) process. The C/SiC plate with defects was examined using three Nondestructive Testing (NDT) technologies: thermography，X-ray radiography and computed tomography. The flexural properties of the sample with the defect were also investigated. The results show that X-ray radiographic technology is applicable to examine the defects with different densities，thermographic technology can be applicable to test the defects with poor thermal diffusivity such as the pores and delaminations，and industrial computed tomographic technology is applicable to detect the exact localization，in particular the visualization of the depth and thickness of the defects. It is found that the 2D C/SiC samples can easily crack and delaminate in the interface between matrix and defect under loading. With increasing the defect length，the flexural strength of the samples and the crack propagation energy decrease.