低损耗ZrTi<sub>2</sub>O<sub>6</sub>填充PTFE复合基板性能

吴开拓; 袁颖; 张树人; 闫翔宇; 崔毓仁

低损耗ZrTi₂O₆填充PTFE复合基板性能

电子科技大学微电子与固体电子学院, 电子薄膜与集成器件国家重点实验室, 成都 610054

基金项目: 中央高校基本科研业务费专项资金（ZYGX2012J035）

详细信息

通讯作者:
袁颖，博士，副教授，主要从事电子陶瓷与无器件研究 E-mail：yingyuan@uestc.edu.cn

中图分类号: TB332
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出版历程
- 收稿日期: 2012-12-24
- 修回日期: 2013-07-16
- 刊出日期: 2013-12-14

Properties of low loss ZrTi₂O₆ filled PTFE composite substrates

State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China

摘要

摘要: 采用热压成型工艺，制备了一种低损耗ZrTi₂O₆陶瓷填充聚四氟乙烯（PTFE）的新型微波复合基板材料。采用介质谐振器法研究了ZrTi₂O₆/PTFE复合材料的微波介电性能（8~12 GHz）。结果表明，ZrTi₂O₆/PTFE复合材料的相对介电常数（ε_r）和介电损耗（tanδ）随着ZrTi₂O₆陶瓷体积分数（0~46%）的增加而增大，介电常数实验值与Lichtenecker模型预测值最吻合。ZrTi₂O₆/PTFE复合材料的热膨胀系数和介电常数温度系数随着ZrTi₂O₆陶瓷体积分数的增加而减小。46%的ZrTi₂O₆为较优填料比例，ZrTi₂O₆/PTFE的相对介电常数为7.42，介电损耗为0.0022（10 GHz）。
- 复合材料 /
- ZrTi₂O₆ /
- 聚四氟乙烯 /
- 介电特性 /
- 基板
Abstract: A new kind of low loss ZrTi₂O₆ filled polytetrafluoroethylene (PTFE) microwave composite substrates were fabricated through the hot-pressing process. The microwave dielectric properties of the composites were measured using dielectric resonator method (18-12 GHz). The relative permittivity (ε_r) and loss tangent (tanδ) of the composites increase with an increase of the volume fraction of ZrTi₂O₆ ceramic (0-46%). The experimental dielectric constants of the composites match well with the theoretically predicted values using Lichtenecker model. As the volume fraction of ZrTi₂O₆ ceramic increases, the thermal expansion coefficient and the temperature coefficient of dielectric constant decrease. The ZrTi₂O₆/PTFE composites exhibit a dielectric constant of 7.42 with a loss tangent of 0.0022 (10 GHz) at an optimum filler volume fraction of 46% ZrTi₂O₆.
- composites /
- ZrTi₂O₆ /
- polyfluortetraethylene /
- dielectric property /
- substrates