Abstract: The interface in SiCw/Al composites was examined.The Auger electron spectroscope (AES) analysis of the fracture surface after the surface being sputter etched show that the bonding between SiC whisker and aluminium matrix is quite good.It was found by using transmit electron microscopy (TEM) and X-ray diffraction analysis that there is no reaction layer at the SiC-Al interface.Analyzagg results show that no Si and C can diffuse into the matrix and no Al can diffuse into the whisker either,which was further proved by the X-ray diffraction measuring results.The experimental results also show that there may be certain orientation relationships between the SiC whisker and the nearby matrix.