Abstract:
The inter facial structure of Ti/single-cry stal Al
2O
3( 0001), Ti/poly crystalline Al
2O
3, and Ti/single-crystal MgO( 001) system made by RF magnetron sputtering was investigated by using XPS combining with Ar
+ ion insituetching in this paper. The results show that the reduction of Al
3+ and oxidation of tit aniumexist at the interface of Ti/Al
2O
3 systems. Moreover, the reduced Alappears before the oxided Tiat the interface of Ti/Al
2O
3 in the etching process. Nosimilar interfacial reaction was observed at the interface of Ti/MgO system by the same making method.