液硅渗透法制备SiBC改性C/CSiC复合材料

Fabrication of Si B C modified C/C SiC composite by liquid silicon infiltration

  • 摘要: 为了降低液硅渗透法制备C/C-SiC复合材料中残留Si的含量, 采用浆料浸渗结合液硅渗透工艺制备B12(C, Si, B)3改性C/C-SiC复合材料。通过分析不同比例B4C-Si体系在不同温度的反应产物, 确定了B12(C, Si, B)3的生成条件。结果表明: B4C和Si在1300℃开始反应, 生成少量B12(C, Si, B)3和SiC, 且B12(C, Si, B)3的生成量随反应温度的升高而增加; 当B4C和Si的摩尔比为3:1、 反应温度为1500℃ 时, 产物为B12(C, Si, B)3和SiC; 液硅渗透法制备的C/C-SiC复合材料相组成为非晶态C、 β-SiC和B12(C, Si, B)3, 未见残留Si。

     

    Abstract: In order to reduce the content of residual Si generated in the process of liquid silicon infiltration, B12(C, Si, B)3 modified C/C-SiC composite was prepared by a joint process of slurry impregnation and liquid silicon infiltration. By analyzing the products of B4C-Si system with different B4C/Si molar ratios after sintered at different temperatures, the formation condition of B12(C, Si, B)3 was studied. The results indicate that B4C starts to react with Si at 1300℃, leading to the formation of a small amount of B12(C, Si, B)3 and SiC. The amount of B12(C, Si, B)3 generated in the reaction increases with increasing sintering temperature. The sintering product of B4C-Si system with a B4C/Si molar ratio of 3:1 at 1500℃ is composed of B12 (C, Si, B)3 and SiC. The C/C-SiC composite fabricated by liquid silicon infiltration is composed of amorphous C, β-SiC and B12(C,Si,B)3, and no residual Si is detected.

     

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