SiC/ C 薄膜的制备及其力学性能

王新华; YOSHIDA T

SiC/ C 薄膜的制备及其力学性能

王新华^1,,
YOSHIDA T²

1.
浙江大学材料科学与工程系, 杭州 310027;
2.
东京大学材料工程系, 东京 11328656

详细信息

通讯作者:
王新华,博士,副教授,主要从事薄膜材料和能源材料研究 E-mail:xinhwang@zju.edu.cn

中图分类号: TQ163⁺14;TB43
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出版历程
- 收稿日期: 2004-02-12
- 修回日期: 2004-06-13
- 刊出日期: 2005-02-14

PREPARATION OF SiC/ C FILM AND ITS MECHANICAL PROPERTIES

WANG Xinhua^1,,
YOSHIDA T²

1.
Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
2.
Department of Materials Engineering, University of Tokyo, Tokyo 11328656, Japan

摘要

摘要: 以SiC 超细粉为原料、采用热等离子体物理气相沉积( TPPVD) 技术快速制备出了高质量SiC/ C 薄膜, 最大沉积速度达到225 nm/ s, 高于常规物理气相沉积( PVD) 和化学气相沉积(CVD) 法两个数量级。用扫描电子显微镜、高分辨透射电子显微镜和X 射线光电子谱对薄膜的形貌和微结构进行了观察和分析, 并用纳牛力学探针测定了薄膜的力学性能。研究结果表明, 向等离子体中导入CH₄, SiC/ C 薄膜沉积速度增大, 薄膜中C 含量增加, 薄膜断面呈现柱状结构。薄膜硬度和弹性模量随薄膜中C 含量增加而降低, 在接触深度为40 nm 时由纳牛力学探针测得沉积薄膜的最大硬度达到38 GPa。
- 薄膜 /
- SiC/ C /
- 硬度 /
- 力学性能
Abstract: High-quality SiC/ C composite films were deposited with SiC ultrafine powder as a raw material by thermalplasma physical vapor deposition ( PVD) technique. The maximum deposition rate reached 225 nm/ s. The films werecharacterized with high resolution transmission electron microscope ( HRTEM) , scanning electron microscope ( SEM)and X-ray photoelectron spectrocope (XPS) . The mechanical properties of the deposited films were evaluated with ananoindenter in comparison with that of sintered SiC. The results show that when CH₄ is introduced into plasma , the deposition rate and C content of SiC/ C composite film increase , and films with columnar structure are formed. The hardnessand elastic modulus of the deposited films decrease with increasing C content in the SiC/ C composite films. The hardnessevaluated with a nanoindenter at contact depth of 40 nm reaches 38 GPa , which suggests good quality of the depositedfilms.
- films /
- SiC/ C /
- hardness /
- mechanical properties