Numerical simulation for ICVI process of Si3N4P/ Si3N4 composites
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摘要: 根据Si3N4 颗粒增强体的结构特点及等温化学气相法( ICVI) 的工艺特点, 对Si3N4 颗粒增强Si3N4 复合材料的致密化过程进行了数值模拟。用球形孔隙模型表征Si3N4 颗粒增强体的结构特征, 用传质连续方程表征先驱体在预制体中的浓度分布。为了检验模型的准确性和适用性, 进行了相应的实验验证。模拟结果与实验结果具有相似的致密化规律, 预测的渗透时间和孔隙率与实验结果均十分接近, 表明本文中建立的数学模型可以较好地表征Si3N4P / Si3N4 复合材料的ICVI 过程。
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关键词:
- Si3N4P / Si3N4 复合材料 /
- 等温化学气相渗透 /
- 数值模拟
Abstract: A mathematical model according to st ructural feature of Si3N4 particle reinforcement and process characteristic of isothermal chemical vapor infilt ration ( ICVI) was proposed to numerically simulate the densification behaviors of Si3N4 particle reinforced Si3N4 composites. The ball-like pore model is developed to depict the st ructure ofSi3N4 particle reinforcement and the mass t ransfer equation of reagent s is used to characterize the concent ration profile in the preform. The corresponding experiment was done in order to testify the mathematical model . The calculated result s represent the same densification regularity as the experimental data does , and the curves of calculatedinfilt ration time and porosity are in agreement with the experimental ones , which indicates that the model developedhere is reasonable to characterize the ICVI process of Si3N4P / Si3N4 composites.
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