Preparation and properties characterization of Al2O3 doping BaTi0.85Sn0.15O3 ceramics
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摘要: 通过传统固相二次烧结法来制备x wt% Al2O3（x=0、1.0、1.5）/BaTi0.85Sn0.15O3（BTS）陶瓷。研究了掺杂不同含量Al2O3对BTS陶瓷的微观结构、介电性能及挠曲电性能的影响。结果表明，掺杂Al2O3的BTS陶瓷不改变陶瓷的晶体结构，仍为标准钙钛矿结构晶型；Al2O3的掺入能够有效降低晶粒尺寸，具有明显的细晶作用。随着Al2O3含量的增大，Al2O3/BTS陶瓷的介电常数减小，介电损耗得到明显改善，居里峰逐渐宽化且向温度高的方向偏移。Al2O3/BTS陶瓷的挠曲电系数随着Al2O3含量的增加和测试环境温度的升高均减小。此外，Al2O3/BTS陶瓷的挠曲电系数和介电常数之间存在一种近线性关系，但当温度非常接近于居里温度时，这种线性关系减弱。Abstract: x wt% Al2O3(x=0, 1.0, 1.5)/BaTi0.85Sn0.15O3(BTS) ceramics were prepared by the traditional secondary solid state reaction method. And the effects of BTS ceramics doped with Al2O3 on the microstructure, dielectricity and flexoelectricity were studied. The results show that BTS ceramics doped with Al2O3 are still the standard perovskite crystal structure, Al2O3 reduces the size of the grain effectively. When Al2O3 doping amount increases, the dielectric constant of Al2O3/BTS ceramics decreases, the dielectric loss of Al2O3/BTS ceramics decreases, the Curie peaks broaden and shift to the high temperature direction. With the increase of Al2O3 content and test temperature, the flexoelectric coefficient of Al2O3/BTS ceramics decreases.And there is a near linear relationship between the coefficient of deflection and dielectric constant of Al2O3/BTS ceramics, but when the temperature is very close to the Curie temperature, the linear relationship is weakened.
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Keywords:
- BaTi0.85Sn0.15O3(BTS) /
- Al2O3 doping /
- microstructure /
- dielectricity /
- flexoelectricity
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