自支撑多孔硅/ZnO复合材料的制备及其超级电容特性

Preparation of freestanding porous silicon/ZnO composites and its supercapacitor property

  • 摘要: 首先利用二步阳极氧化法制备了自支撑多孔硅,再利用真空抽滤法在自支撑多孔硅中沉积ZnO纳米籽晶层,最后用水热合成法使ZnO纳米籽晶进一步长大。采用扫描电子显微镜、X射线能谱分析和光致发光谱分析对样品的形貌、元素及发光性能进行了表征。结果表明:自支撑多孔硅内部成功填充了ZnO纳米颗粒并形成了自支撑多孔硅/ZnO复合材料。将这种复合材料作为超级电容器电极进行了电化学测试,包括循环伏安、阻抗谱和恒电流充放电测试,该复合材料有较好的超级电容特性,比容量可达到15.7 F/g,相比于自支撑多孔硅提高120倍。

     

    Abstract: Two step anodic oxidation method was firstly used to prepare freestanding porous silicon. Then ZnO nanocrystal layer was deposited in the freestanding porous silicon using vacuum filtration method and hydro-thermal synthesis approach was used for further growth of ZnO nanocrystals finally. The morphology, element and luminescence properties of the samples were characterized by scanning electron microscope, X-ray energy dispersive spectrum analysis and photoluminence spectrum analysis. The results show that ZnO nanoparticles exist in the freestanding porous silicon and porous silicon/ZnO composites form successfully. Moreover, the electrochemical tests of the composites as a supercapacitor electrode was conducted by cyclic voltamerty, impendance spectrum and galvanostatic charge/discharge tests. The composites have good supercapacitor property. The specific capacitances can reach 15.7 F/g, with an increase of 120 times compared with the freestanding porous silicon.

     

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