Si3N4原位增强Cu基复合材料的制备

Preparation of Si3N4 in-situ reinforced Cu matrix composites

  • 摘要: 采用感应炉熔炼及水雾化工艺制得了Cu-Si合金粉末, 经N2、 H2混合气体选择氮化和真空放电等离子烧结(SPS)成型, 制备得到了Si3N4原位增强Cu基复合材料(Si3N4/Cu), 利用萃取法研究了选择性氮化产物及其晶体结构。结果表明: 复合粉末中N含量随氮化温度的升高和氮化时间的延长而增大。在1 000 ℃下氮化, 持续时间大于60 h时, 粉末中的N含量明显提高;Cu的衍射峰出现整体向大角度方向的明显偏移, 同时晶格常数变小, 表明Si从Cu基体中脱溶, 与N反应生成Si3N4; Si3N4/Cu复合材料的增强体以β-Si3N4为主;随着氮化温度的升高和氮化时间的延长, Si3N4/Cu复合材料的电导率和硬度逐步提高。

     

    Abstract: Cu-Si alloy powder was prepared by induction furnace melting and water atomization process, and the Si3N4 in-situ reinforced Cu matrix composites (Si3N4/Cu) were prepared after gas mixture of N2 and H2 selective nitriding and vacuum spark plasma sintering (SPS) forming. The selective nitriding product and its crystalline structure were investigated by extraction method. Results show that nitrogen content of composite powder rises with the increase of nitriding temperature and extension of nitriding time. The nitrogen content significantly increases after nitriding for more than 60 h under 1 000 ℃. Overall diffraction peaks of Cu apparently move to the big angle, and the lattice constant decreases at the same time, which suggest that Si exsolves from Cu matrix to form Si3N4 while reacts with N. The reinforcement in Si3N4/Cu composites is mainly β-Si3N4. With nitriding temperature and time increasing, the electrical conductivity and hardness of Si3N4/Cu composites gradually increase.

     

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