机械搅拌器对C-SiC/Cu半固态浆料中石墨颗粒和SiC<sub>P</sub>的影响

李鸿武; 杜云慧; 张鹏; 曹海涛; 苏丽洁

doi:10.13801/j.cnki.fhclxb.20200225.002

机械搅拌器对C-SiC/Cu半固态浆料中石墨颗粒和SiC_P的影响

doi: 10.13801/j.cnki.fhclxb.20200225.002

北京交通大学　机械与电子控制工程学院，北京 100044

基金项目: 北京市自然基金资助项目(2162036)

详细信息

通讯作者:
杜云慧，博士，副教授，硕士生导师，研究方向为金属基复合材料的成形　E-mail：yhdu@bjtu.edu.cn

中图分类号: TG249
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出版历程
- 收稿日期: 2019-12-11
- 录用日期: 2020-02-14
- 网络出版日期: 2020-02-25
- 刊出日期: 2020-11-15

Effect of mechanical stirrer on graphite particles and SiC_P in C-SiC/Cu semi-solid slurry

School of Mechanical, Electronic and Control Engineering, Beijing Jiaotong University, Beijing 100044, China

摘要

摘要: 利用直桨叶搅拌器在圆柱坩埚内机械搅拌C-SiC/Cu半固态浆料，研究搅拌速度为200 r/min、搅拌器上下移动速度为10 mm/s时C-SiC/Cu半固态浆料中石墨颗粒和SiC颗粒(SiC_P)的均匀性。结果表明：直桨叶与水平面的夹角γ与两种颗粒在坩埚顶部和底部含量偏差都存在二次关系，当γ=30°时石墨颗粒和SiC_P在坩埚中轴向分布均匀，但同一水平面内的SiC_P仍存在偏聚现象，说明SiC_P的偏聚是导致常规直桨叶机械搅拌C-SiC/Cu半固态浆料整体不均匀的主要原因；利用双层桨叶搅拌器代替常规直桨叶搅拌器，通过调整叶片层间距h，当h=10~20 mm时可以消除SiC_P的偏聚现象；通过对单层桨叶搅拌器和双层桨叶搅拌器机械搅拌铸造获得的C-SiC/Cu复合材料进行磨损试验发现，单层桨叶搅拌器不同部位磨损率存在差异，双层桨叶搅拌器磨损率几乎相同。说明SiC_P的偏聚可以通过增大机械搅拌剪切力度得以消除，利用双层桨叶搅拌器进行机械搅拌可以获得均质的C-SiC/Cu半固态浆料。
- 铜基复合材料 /
- 颗粒增强 /
- 均匀分布 /
- 双层搅拌器 /
- 机械搅拌
Abstract: The mechanical stirring of C-SiC/Cu semi-solid slurry was conducted in a cylindrical crucible by a straight-blade stirrer. The distribution of graphite particles and SiC particles (SiC_P) in the C-SiC/Cu semi-solid slurry was studied under 200 r/min for stirring speed and 10 mm/s for speed of moving up and down of stirrer. The results show that there is a quadratic relationship between the angle γ between the straight blade and the horizontal plane and the content of the graphite particles and SiC_P in the top and bottom of the crucible. When γ=30°, the axial distributions in the crucible of graphite particles and SiC_P are homogeneous, but the SiC_P are still segregated, which indicates that the segregation of SiC_P leads to the unhomogeneity of C-SiC/Cu semi-solid slurry in conventional straight-blade mechanical stirring. The double-blade agitator is used instead of the conventional straight blade agitator to adjust the blade layer spacing h to 10–20 mm, which can eliminate the segregation of SiC_P. The wear tests of the C-SiC/Cu composites obtained by mechanical stirring casting with single blade stirrer and double-layer blade stirrer were carried out. The wear rates of different parts of C-SiC/Cu composites in the single blade mechanical stirring casting are different, however, they are nearly the same in the double-layer blade. It shows that the segregation of SiC_P can be eliminated by increasing the mechanical agitation shearing action. The uniform distribution of C-SiC/Cu semi-solid slurry can be achieved by double-layer-stirrer mechanical stirring.
- copper matrix composite /
- particle-reinforced /
- uniform distribution /
- double-layer stirrer /
- stirring casting

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图 1 搅拌装置示意图

Figure 1. Schematic diagram of agitator((a) Whole setup configuration; (b) Cross section of A-A; (c) Cross section of B-B)

1—Stirrer; 2—Crucible; 3—Cooling-pipes; 4—Heating-rods; 5—Cover; 6—Ar gas pipe; 7—Thermocouple; 8—Semi-solid slurry; 9—Center stopple; 10—Lower side stopple; 11—Upper side stopple; 12—Lower bracket; 13—Water tank; 14—Rotating motor; 15—Rotating gearing; 16—Moving board; 17—Moving screw; 18—Moving gearing; 19—Moving motor; 20—Lower switch; 21—Upper switch; 22—Upper bracket

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图 2 单层桨叶搅拌器示意图

Figure 2. Illustration of single blade stirrer

ω—Direction of rotation; γ—Angle between straight blade and horizontal plane; R—Stirrer; S—Blade holder; B₁—Blade 1; B₂—Blade 2; B₃—Blade 3; B₄—Blade 4; T—Endpoint

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图 3 双层桨叶搅拌器示意图

Figure 3. Illustration of double-layer blade stirrer

h—Blade layer spacing

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图 4 磨损试样取样示意图

Figure 4. Schematic diagram of sample sampling for wear

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图 5 搅拌桨叶与水平面的夹角γ与坩埚底部和顶部颗粒含量之间的关系

Figure 5. Relationship between angle γ between stir-blade and horizontal plane and particles content at bottom and top of crucible

SiC_P—SiC particles

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图 6 γ对浆料运动的影响

Figure 6. Influence of γ on movement of slurry change ((a) Change of slurry movement; (b) Decomposition of movement along blade surface)

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图 7 γ与坩埚底部和顶部颗粒含量偏差d之间的关系

Figure 7. Relationship between γ and particles content relative deviation at bottom and top of crucible d ((a) Graphite particles content relative deviation d₁; (b) SiC_P content relative deviation d₂)

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图 8 γ=30°时C-SiC/Cu半固态浆料冷淬铸锭的微观组织

Figure 8. Microstructures of C-SiC/Cu semi-solid slurry cold quenching ingot casting when γ=30°

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图 9 双层搅拌器叶片层间距h与SiC_P聚集区尺寸的关系

Figure 9. Relationship between double-layer-stirrer interlamellar spacing h and SiC_P aggregation area size

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图 10 双层桨叶搅拌器机械搅拌获得的C-SiC/Cu铸锭微观组织

Figure 10. Microstructures of C-SiC/Cu ingot stirred by double-layer blade stirrer

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表 1 C-SiC/Cu复合材料成分配比

Table 1. Composition proportion of C-SiC/Cu composite

Cu/vol%	Graphite/vol%	SiC/vol%	Impurities/vol%
89	10	1	<0.5

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表 2 不同位置的石墨颗粒和SiC颗粒(SiC_P)含量及含量偏差d

Table 2. Contents of graphite particles and SiC particles(SiC_P) at different positions and content relative deviation d

Sample	C_ct/vol%	C_cb/vol%	C_st/vol%	C_sb/vol%	d
1	10.0	10.1	0.99	1.00	≈0
2	9.9	10.0	1.01	1.00	≈0
3	10.1	10.0	1.00	1.01	≈0
Notes: C_ct, C_cb—Graphite particles content at top and bottom of crucible, respectively; C_st, C_sb— SiC_P content at top and bottom of crucible, respectively; d— Particles content reative deviation.

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表 3 不同搅拌器获得的C-SiC/Cu复合材料不同部位的磨损率

Table 3. Wear rates of different parts of C-SiC/Cu composites stirred by different stirrers

Sampling point	R_st	R_sc	R_sb	R_dt	R_dc	R_db
1	0.255	0.241	0.251	0.248	0.247	0.248
2	0.241	0.254	0.249	0.249	0.248	0.248
3	0.245	0.258	0.241	0.249	0.248	0.248
4	0.260	0.243	0.240	0.248	0.248	0.247
5	0.240	0.250	0.254	0.249	0.248	0.247
6	0.252	0.240	0.251	0.247	0.247	0.248
7	0.243	0.250	0.252	0.248	0.248	0.249
Notes: R_st, R_sc, R_sb—Wear rates of top, center and bottom of ingot casting in simple blade stirrer mechanical stir casting, respectively; R_dt, R_dc, R_db—Wear rates of top, center and bottom of ingot casting in double-layer blade stirrer mechanical stir casting, respectively.

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