改性纳米BN/甲基乙烯基硅橡胶导热复合材料的制备

钟洨; 孟旭东; 张睿涵; 张一坤; 顾军渭

doi:10.13801/j.cnki.fhclxb.20190122.001

改性纳米BN/甲基乙烯基硅橡胶导热复合材料的制备

doi: 10.13801/j.cnki.fhclxb.20190122.001

1.
西北工业大学理学院应用化学系, 西安 710129;
2.
中国电子科技集团公司第五十四研究所, 石家庄 050081

基金项目: 国家自然科学基金（51773169；51403175）；2018大学生创新、创业训练项目

详细信息

通讯作者:
顾军渭,博士,教授,研究方向为导热高分子复合材料,E-mail:gjw@nwpu.edu.cn

中图分类号: TQ336.8
计量
- 文章访问数: 765
- PDF下载量: 180
- 被引次数: 0
出版历程
- 收稿日期: 2018-11-11
- 刊出日期: 2019-11-15

Preparation of functionalized nano BN/methyl vinyl silicone rubber thermally conductive composites

1.
Department of Chemistry, School of Science, Northwestern Polytechnical University, Xi'an 710129, China;
2.
The 54 th Research Institute of CETC, Shijiazhuang 050081, China

摘要

摘要: 以甲基乙烯基硅橡胶（MVSR）为基体，硅烷偶联剂KH550与聚倍半硅氧烷（POSS）结合改性的纳米BN（POSS-g-nBN）为导热填料，经混炼-热压制备POSS-g-nBN/MVSR导热复合材料。结果表明，POSS-g-nBN/MVSR导热复合材料的导热系数（λ）、介电常数（ε）和介电损耗正切值（tanδ）均随nBN用量增加而增大。相同nBN用量下，表面功能化改性有助于进一步提高nBN/MVSR导热复合材料的λ，降低ε和tanδ。当POSS-g-nBN用量为30vol%时，POSS-g-nBN/MVSR导热复合材料的λ为0.92 W（mK）^-1，约为纯MVSR的（λ=0.18 W（mK）^-1）5倍，也高于相同nBN用量的nBN/MVSR导热复合材料的λ（0.77 W（mK）^-1）。相比未改性nBN，POSS-g-nBN更易在MVSR基体内形成导热通路且和MVSR基体具有相对更低的界面热障。当POSS-g-nBN用量为30vol%时，POSS-g-nBN/MVSR导热复合材料的ε和tanδ分别为3.39和0.0049，略低于相同nBN用量的nBN/MVSR导热复合材料的ε（3.43）和tanδ（0.0057）。
- 甲基乙烯基硅橡胶(MVSR) /
- 氮化硼(BN) /
- 聚倍半硅氧烷(POSS) /
- 导热复合材料 /
- 介电性能
Abstract: The silane coupling agent KH550 and polyhedral oligomeric silsesquioxane (POSS) functionalized nano BN (nBN)/methyl vinyl silicone rubber (POSS-g-nBN/MVSR) thermally conductive composites were fabricated via kneading followed by hot compression method. The thermally conductive coefficient (λ), dielectric constant (ε) and dielectric loss tangent (tanδ) values of the nBN/MVSR composites are all increased with increasing addition of nBN. For a given nBN loading, the surface functionalization of nBN can further increase λ and decrease ε and tanδ of the nBN/MVSR composites. The maximum λ value of the POSS-g-nBN/MVSR composites improves to 0.92 W/(mK) with 30vol% POSS-g-nBN, which is about 5 times of the pure MVSR matrix (0.18 W(mK)^-1) and also higher than that of nBN/MVSR composites with 30vol% nBN (0.77 W(mK)^-1). In comparison to that of pristine nBN fillers, POSS-g-nBN fillers are easier to form thermally conductive channels in MVSR matrix and possess relatively lower interfacial thermal resistance with MVSR matrix. The corresponding ε and tanδ of the POSS-g-nBN/MVSR composites are 3.39 and 0.0049, respectively, slightly lower than that of nBN/MVSR composites with 30vol% nBN (ε of 3.43 and tanδ of 0.0057).
- methyl vinyl silicone rubber (MVSR) /
- boron nitride (BN) /
- polyhedral oligomeric silsesquioxane (POSS) /
- thermally conductive composites /
- dielectric properties