生长温度对InAs/GaAs横向异质结构纳米线形貌及晶体结构的影响

刘妍; 彭艳; 郭经纬; 徐朝鹏; 喇东升

doi:10.13801/j.cnki.fhclxb.20190118.002

生长温度对InAs/GaAs横向异质结构纳米线形貌及晶体结构的影响

doi: 10.13801/j.cnki.fhclxb.20190118.002

刘妍¹,
彭艳¹,
郭经纬^2,3,,
徐朝鹏²,
喇东升^4,5

1.
燕山大学国家冷轧板带装备及工艺工程技术研究中心, 秦皇岛 066004;
2.
燕山大学信息科学与工程学院, 秦皇岛 066004;
3.
燕山大学河北省信息传输与信号处理重点实验室, 秦皇岛 066004;
4.
东北大学秦皇岛分校计算机与通信工程学院, 秦皇岛 066004;
5.
东南大学毫米波国家重点实验室, 南京 210096

基金项目: 国家自然科学基金（51375424；61501100）；河北省自然科学基金（F201903012）；东南大学毫米波国家重点实验室开放课题（K201705）

详细信息

通讯作者:
郭经纬,博士,副教授,硕士生导师,研究方向为微纳材料及器件,E-mail:jingweiguo@ysu.edu.cn

中图分类号: TN304.2
计量
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- 被引次数: 0
出版历程
- 收稿日期: 2018-10-31
- 刊出日期: 2019-10-15

Effect of growth temperature on the morphology and crystal structure of InAs/GaAs radial heterostructure nanowires

1.
National Engineering Research Center for Equipment and Technology of Cold Strip Rolling, Yanshan University, Qinhuangdao 066004, China;
2.
School of Information Science and Engineering, Yanshan University, Qinhuangdao 066004, China;
3.
Hebei Key Laboratory of Information Transmission and Signal Processing, Yanshan University, Qinhuangdao 066004, China;
4.
School of Computer and Communication Engineering, Northeastern University at Qinhuangdao, Qinhuangdao 066004, China;
5.
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China

摘要

摘要: 低维半导体材料因其超常的物理性能而受到了广泛关注和研究。本文采用金属有机物化学气相沉积（MOCVD）技术，利用金作催化剂制备了InAs/GaAs横向异质结构纳米线，并讨论了不同生长温度情况下InAs横向异质材料对纳米线形貌及晶体结构的影响。提高InAs材料的生长温度，可以有效地抑制纳米线的纵向生长，使其实现横向异质结构的生长。在异质结构纳米线横向生长时发生了侧面晶面旋转的现象，这是纳米线表面重构后侧面趋向能量更低的晶面的结果。本文的研究工作为推动微纳技术的发展提供了相应的理论基础和科学依据。
- 纳米线 /
- 气-液-固 /
- 金属有机化合物气相沉积(MOCVD) /
- GaAs /
- InAs
Abstract: Low-dimensional semiconductor materials have attracted wide attention and research due to their extraordinary physical properties. In this paper, metal organic chemical vapor deposition (MOCVD) was used to grow InAs/GaAs radial heterostructure nanowires using gold as catalysts. The effects of growth temperatures of InAs radial heterostructure on the morphology and crystal structure of the nanowires were discussed. Increasing the growth temperature of InAs material can effectively inhibit the axial growth of nanowires and achieve the growth of radial heterostructures. The lateral crystal surface rotation occurs when the heterostructure nanowires grow laterally, which is the result of the lower side of the nanowires. The research work in this paper provides a theoretical basis and scientific basis for the development of micro-nano technology.
- nanowire /
- vapor-liquid-solid /
- metal organic chemical vapor deposition (MOCVD) /
- GaAs /
- InAs