柔性可穿戴碲化铋基热电器件的研究进展

张彤; 李杰; 叶施莹; 吴凯; 任松; 方剑

柔性可穿戴碲化铋基热电器件的研究进展

张彤¹,
李杰¹,
叶施莹^{2, 3},
吴凯⁴,
任松^{2, 3},
方剑^{2, 3, ,}

1.
江苏省纺织产品质量监督检验研究院, 江苏南京 210007
2.
苏州大学　纺织与服装工程学院, 江苏苏州 215021
3.
苏州大学　现代丝绸国家工程实验室, 江苏苏州 215023
4.
苏州大学　材料与化学化工学部, 江苏苏州 215123

基金项目: 江苏省市场监督管理局科技计划项目(KJ2023023)；国家自然科学基金面上项目(52173059) ；江苏省高校自然科学研究项目重大项目(21KJA540002)

详细信息

通讯作者:
方剑，博士，教授，博士生导师，研究方向为电活性纤维材料和柔性智能可穿戴纺织品　E-mail：jian.fang@suda.edu.cn

中图分类号: TB332
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- 文章访问数: 256
- HTML全文浏览量: 138
- PDF下载量: 16
- 被引次数: 0
出版历程
- 收稿日期: 2023-10-30
- 修回日期: 2023-12-05
- 录用日期: 2024-01-02
- 网络出版日期: 2024-01-13
- 刊出日期: 2024-07-15

Advances in flexible wearable bismuth telluride-based Materials thermoelectric devices

ZHANG Tong¹,
LI Jie¹,
YE Shiying^{2, 3},
WU Kai⁴,
REN Song^{2, 3},
FANG Jian^{2, 3
, ,}

1.
Jiangsu Textile Product Quality Supervision and Inspection Institute, Nanjing Jiangsu 210007, China
2.
College of Textile and Clothing Engineering, Soochow University, Suzhou, Jiangsu 215021, China
3.
National Engineering Laboratory for Modern Silk, Soochow University, Suzhou, Jiangsu 215023, China
4.
College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu 215123, China

Funds: Science and Technology Program of Jiangsu Administration for Market Regulation (No. KJ2023023); National Natural Science Foundation of China (52173059); The Major Basic Research Project of the Natural Science Foundation of the Jiangsu Higher Education Institutions (21KJA540002)

摘要

摘要: 随着全球能源的消耗加剧，热电器件的开发应用成为解决能源消耗问题的有效途径之一，其中，碲化铋(Bi₂Te₃)基柔性热电器件因在可穿戴领域逐步实现应用，得到了学界和业界的广泛关注。然而,受其材料成本较高、刚性结构等多方面因素的限制，Bi₂Te₃基柔性热电器件难以在保持高效热电性能的同时，实现柔性可穿戴化应用。本文系统地阐述了当前Bi₂Te₃基柔性热电器件在材料复合与柔性结构设计上的研究进展,特别是在柔性结构设计上，涵盖了块状、膜类以及纱线型三种结构。最后，总结分析了Bi₂Te₃柔性热电器件未来可能面临的挑战与发展趋势，以期促进热电器件在可穿戴领域实现广泛应用。
- 碲化铋 /
- 热电材料 /
- 热电器件 /
- 热电薄膜 /
- 热电织物 /
- 可穿戴热电
Abstract: As the global energy consumption increasing rapidly, development and application of thermoelectric devices have become one of the effective ways to solve the problem. Among them, bismuth telluride-based flexible devices attract widespread attention because they have been applied in the wearable sector gradually. However, due to the limitations of high material cost, rigid structure, and other factors, it is difficult for bismuth telluride-based flexible thermoelectric devices to achieve flexible wearable applications while maintaining efficient thermoelectric properties. This paper systematically reviews the current research progress of bismuth telluride-based flexible thermoelectric devices in terms of material composites and flexible structure design, especially in terms of flexible structure design, which covers three types of structures: ingot-, film- and yarn- shaped. Finally, it summarizes and analyzes the possible future challenges and development trends of bismuth telluride-based flexible thermoelectric devices, to facilitate the realization of a wide range of applications for thermoelectric devices in the wearable field.
- bismuth telluride (BST) /
- thermoelectric material /
- thermoelectric devices /
- thermoelectric thin film /
- thermoelectric fabrics /
- wearable thermoelectric

HTML全文

图 1 三种不同形态的Bi₂Te₃基柔性热电器件

Figure 1. Three different forms of bismuth telluride-based flexible thermoelectric devices

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图 2 (a) TEG结构图及其设备应用的照片^[30]; (b)完成的器件结构图^[6]

Figure 2. (a) the structure of TEG and its applications^[30]; (b) Structure of the TEG^[6]

TEG—Flexible thermoelectric generator

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图 3 (a) f-TEG的制造工艺^[20]; (b) TEG实样图^[46]; (c)热电器件结构图^[44];(d)中空结构器件结构图^[45] ; (e)中空结构器件在手指表面的弯曲图^[45]

Figure 3. (a) Manufacturing process of f-TEG^[20]; (b) TEG sample drawing^[46]; (c) Structure of the TEG^[44]; (d) Structure of the Hollow Structure Device^[45]; (e) Bending diagram of a hollow structure device on the surface of a finger^[45]

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图 4 (a)带有太阳能吸收器的热电器件示意图^[58]；(b)可拉伸器件的设计图^[59]

Figure 4. (a) Schematic diagram of a thermoelectric device with solar absorber^[58] ; (b) Design drawings of stretchable devices^[59]

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图 5 (a)锯齿形针迹; (b)袜型针迹; (c)平纹针迹^[60]; (d)弯曲状态下的纱线型热电器件^[61]; (e)1米×15.5厘米的织物^[62]

Figure 5. (a) serrated stitch; (b) sock needle; (c) plain stitch^[60]; (d) Yarn TEG in bent conditions^[61]; (e) 1 meter × 15.5 cm fabric ^[62]

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表 1 Bi₂Te₃基热电器件应用总结

Table 1. Summary of Bismuth Telluride-based Thermoelectric Device Applications

Device type	TE Materials	Substance*	input voltage/mV	Power Factor/ μW/mK²	Power density/ µW/cm²	Seebeck coefficient/ μV/K	Ref.
Flexible ingot-shaped thermoelectric devices	Single-Walled Carbon Nanotubes (SWCNT) Bi₂Te₃	/	23 (135 K)	891.6 (340 K)	/	/	[16]
	Bi_0.5Te_1.5Te₃ (P-Type) Bi₂Te_2.8Se_0.2 (N-Type)	Polyimide film (PIF)	2800-3300 (body temperature)	/	3.5	/	[20]
	Bi_0.5Sb_1.5Te₃ (P-Type) Bi₂Se_0.3Te_2.7 (N-Type)	Flexible Printed Circuit Board (FPCB)	63	/	8.68	/	[44]
	Bi_0.5Sb_1.5Te₃ (P-Type) Bi₂Se_0.5Te_2.5 (N-Type)	Flexible Printed Circuit Board (FPCB)	5.35	/	4.75	/	[45]
	Carbon Nanotubes (CNTs) P,N Bi₂Te₃	Polydimethylsiloxane (PDMS)	920	/	570	/	[46]
Flexible film-shaped thermoelectric devices	Bi₂Te₃ Polyvinylidene Fluoride (PVDF)	Polyethylene terephthalate (PET)	2.3 (natural exhalation)	133(P) 124 (N)	/	/	[6]
	N bismuth telluride(Graphene) P bismuth telluride (SWCNT)	Polyimide (PI)	23 (135 K)	55 (P) 108 (N)	/	/	[30]
	Bi₂Te₃ PEDOT:PSS Dimethyl sulfoxide (DMSO)	/	/	/	/	45 ± 2.1	[40]
	Bi₂Te₃	AIN	/	1130	/	/	[48]
	Bi₂Te₃	MASnI₃	/	/	/	/	[49]
	Bi₂Te₃	Polyimide film (PIF)	155.1 (46℃)	/	2530	/	[55]
	Bi_0.4Sb_1.6Te₃ (P-Type) Bi₂Se_0.3Te₂ (N-Type)	Polyimide film (PIF)	55.15 (AM 1.5 G)	/	/	166.37 (P) −116.38 (N)	[56]
	Bi₂Te₃	Ecoflex	/	/	150	/	[57]
Flexible yarn-shaped thermoelectric devices	Bi₂Te₃ Polyvinyl pyrrolidone(PVP)	/	/	/	/	3062	[32]
	Bi₂Te₃- Sb₂Te₃-PAN	/	15.8 14.8. 11.9	/	62 11 9	/	[60]
	Bi_0.4Sb_1.3Te₃ (P-Type) Bi₂Te_3.3Se_0.2 (N-Type)	Polyimide Filament Polydimethylsiloxane (PDMS)	/	/	58	/	[61]
	Bi₂Te₃	Extreme filaments Poly (3,4-ethylenedioxythiophene)-poly(PEDOT)	/	/	613 (25 K)	/	[62]
Notes：Input voltage is the voltage produced by a device at a certain temperature；Power factor is the ratio of the power dissipated to the product of the input volts times amps；Power density is the power generated per square centimeter of the TEG；Seebeck coefficient is defined as follows: S=−ΔV/ΔT with S being the Seebeck coefficient, ΔT the temperature difference between the ends of the material, and ΔV the potential difference.

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