基底温度对Ag-MgF2金属陶瓷薄膜内应力的影响
EFFECT OF SUBSTRATE TEMPERATURE ON RESIDUAL STRESS IN Ag-MgF2 CERMET FILMS
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摘要: 用电子薄膜应力分布测试仪测量了基底温度对Ag-MgF2金属陶瓷薄膜内应力的影响。结果表明:基底温度在300℃~400℃范围内,φ20.4mm选区内的薄膜平均应力最小,应力分布比较均匀,应力为张应力。XRD分析表明:当基底温度在300℃~400℃范围内,Ag-MgF2薄膜中的Ag和MgF2组分的晶格常数接近块体值,说明通过改变基底温度可以降低薄膜内应力。Abstract: This paper has investigated the effect of substrate temperature on the residual stress and microstructure of Ag-MgF2 cermet films prepared by vapor deposition. X-ray diffraction (XRD) technique was employed to study the microstructure of the films. The results show that the average stress over a φ20.4 mm round area is the least and the residual stress of the films appears to be tensile stress between 300℃ and 400℃. Crystal lattice constants of Ag and MgF2 both approach the bulk values. The residual stress of the films can be decreased by altering the substrate temperature.