基底温度对Ag-MgF<sub>2</sub>金属陶瓷薄膜内应力的影响

基底温度对Ag-MgF₂金属陶瓷薄膜内应力的影响

基金项目: 国家自然科学基金(批准号:59972001);安徽省自然科学基金(批准号:01044901)及安徽省教育厅科研基金(批准号:99JL0024)资助课题。

详细信息

摘要

摘要: 用电子薄膜应力分布测试仪测量了基底温度对Ag-MgF₂金属陶瓷薄膜内应力的影响。结果表明:基底温度在300℃~400℃范围内,φ20.4mm选区内的薄膜平均应力最小,应力分布比较均匀,应力为张应力。XRD分析表明:当基底温度在300℃~400℃范围内,Ag-MgF₂薄膜中的Ag和MgF₂组分的晶格常数接近块体值,说明通过改变基底温度可以降低薄膜内应力。
- Ag-MgF₂金属陶瓷薄膜 /
- 应力 /
- 基底温度 /
- 微结构
Abstract: This paper has investigated the effect of substrate temperature on the residual stress and microstructure of Ag-MgF₂ cermet films prepared by vapor deposition. X-ray diffraction (XRD) technique was employed to study the microstructure of the films. The results show that the average stress over a φ20.4 mm round area is the least and the residual stress of the films appears to be tensile stress between 300℃ and 400℃. Crystal lattice constants of Ag and MgF₂ both approach the bulk values. The residual stress of the films can be decreased by altering the substrate temperature.
- Ag-MgF₂ film /
- stress /
- substrate temperature /
- microstructure