α-Si3N4晶须中缺陷与晶须生长气氛关系的研究
RELATIONSHIP BETWEEN THE DEFECTS OF ALPHA-SILICON NITRIDE WHISKERS AND GROWTH ATMOSPHERE
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摘要: 本文研究了用无定形氮化硅超细粉原位生长α-Si3N4晶须,晶须生长温度为1400~1450℃,恒温1~4h.讨论了在晶须生长过程中,不同的保护气氛对晶须质量的影响.当晶须在高纯N2气氛中生长时,得到的晶须中氮含量为32%~34%,氧含量为8%~6%,氯含量为0.1%左右.这类晶须中存在着大量的缺陷.当晶须在NH3气氛中生长时,得到的晶须中氮含量为39%左右,氧含量为1%,氯含量为0.01%,在这类晶须的透射电镜照片中几乎看不到缺陷.Abstract: Alpha-silicon nitride whiskers were prepared by the"in-situ" growth of ultrafine amorphous silicon nitride powders.The experiment was carried out at 1400~1450℃ for 1~4 hours.When the experiment was conducted in the atmosphere of nitrogen with high purity,the nitrogen content,oxygen content and chlorine content in alpha-silicon nitride whiskers obtained were 32%-34%,8%~6% and~0.1%,respectively.A lot of defects were detected in the whisker.However,when the experiment was completed in an atmosphere of ammonia, the content of nitrogen,oxygen and chlorine in the whiskers changed to 39%,1% and 0.01%,respectively,where nearly "defect-free" in the whisker was detected.
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Key words:
- whisker /
- alpha-silicon nitride /
- defect and atmosphere
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