Wettability of SiC/ l iquid Co with Cr additive system
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摘要: 采用座滴法研究了反应烧结SiC/ Co-Cr 体系的润湿性。与反应烧结SiC/ 纯Co 体系进行对比, 研究了Cr 含量、实验温度和保温时间对润湿角的影响及活性元素的作用。结果表明, 加入适量的活性元素Cr 能够显著提高体系的润湿性。当体系的Cr 含量分别为5 % , 7 %和42 %时, 体系的润湿角较小, 润湿性比较好。SiC/ Co-Cr体系和SiC/ 纯Co 体系的润湿过程均属于反应性润湿, 实验温度和保温时间对体系的润湿角影响较大。微观结构研究和XRD 分析表明, 对于SiC/ 纯Co 体系, 界面区域发生了化学反应, 生成了CoSi , 减小了润湿角。加入活性元素Cr 以后, 由于Cr 元素与基体发生反应, 生成Cr23C6 , 进一步降低了体系的界面能, 提高了润湿性。
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关键词:
- 润湿性 /
- 界面反应 /
- 陶瓷/ 金属复合材料 /
- SiC/ 纯Co 体系 /
- SiC/ Co-Cr 体系
Abstract: The wettability of a reaction bonded SiC/ Co-Cr system was studied by the sessile drop technique in highvacuum. The effect of Cr content and technological parameters including wetting temperature and dwelling time onthe wettability of the system was investigated. Compared with the reaction bonded (RB) SiC/ pure Co system , thewettability of the system is remarkably improved by adding active element Cr. The relatively small contact angles ofthe RB SiC/ Co-Cr system are obtained with the Cr content of 5 % , 7 % and 42 % , respectively. Wetting temperatureand dwelling time st rongly affect the contact angle. The experimental result s show that the wetting processes ofboth RB SiC/ pure Co system and RB SiC/ Co-Cr system belong to reactive wetting. Microst ructure study and XRDphase analysis indicate that interfacial reactions take place in the RB SiC/ pure Co system , leading to the formation ofCoSi , and resulting in the decreasing of the contact angle ; but for the RB SiC/ Co-Cr system , interfacial reactionscause the formation of Cr23C6 , leading to the decreasing of the interfacial energy of the system , and consequently thewettability of the system is improved.-
Key words:
- wettability /
- interfacial reaction /
- ceramic/ metal composite /
- SiC/ pure Co system /
- SiC/ Co-Cr system
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