WANG Xinhua. PREPARATION OF SiC-B4C COMPOSITE FILM AND ITS MECHANICAL AND THERMOELECTRIC PROPERTIES[J]. Acta Materiae Compositae Sinica, 2004, 21(3): 49-53.
Citation: WANG Xinhua. PREPARATION OF SiC-B4C COMPOSITE FILM AND ITS MECHANICAL AND THERMOELECTRIC PROPERTIES[J]. Acta Materiae Compositae Sinica, 2004, 21(3): 49-53.

PREPARATION OF SiC-B4C COMPOSITE FILM AND ITS MECHANICAL AND THERMOELECTRIC PROPERTIES

  • Received Date: 2003-10-14
  • Rev Recd Date: 2003-12-15
  • Publish Date: 2004-06-15
  • Preparation and mechanical and thermoelectric properties were studied for SiC-B4C composite films. The results show that thermal plasma PVD with SiC and B4C ultrafine powders as starting materials is a suitable method for the high-rate preparation of SiC-B4C composite films.The good qualified SiC-B4C composite films with a layer-by-layer structure were deposited at a maximum deposition rate of 356 nm/s. The micro Vickers hardness of the deposited films increases with the increasing of B4C content, and the maximum hardness of 35 GPa is obtained. The electrical resistivity and Seebeck coefficient decrease with the increasing of B4C content, and the maximum power factor at 973 K reaches 640 μWm-1K-2 which is 21 times that of sintered SiC.

     

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