XIE You, HUO Yiping, ZHANG Tao, et al. Electronic structures and magnetic properties of Co nanowire encapsulated in (12, 0) boron nitride nanotube[J]. Acta Materiae Compositae Sinica, 2014, 31(1): 118-124.
Citation: XIE You, HUO Yiping, ZHANG Tao, et al. Electronic structures and magnetic properties of Co nanowire encapsulated in (12, 0) boron nitride nanotube[J]. Acta Materiae Compositae Sinica, 2014, 31(1): 118-124.

Electronic structures and magnetic properties of Co nanowire encapsulated in (12, 0) boron nitride nanotube

  • The structural, electronic and magnetic properties of Co10 nanowire encapsulated inside (12,0) boron nitride nanotube (BNNT) were investigated by the first-principles calculations. A approximate regular triangle cross section shape is formed for outer (12,0) BNNT in the relaxed geometry structure of Co10/BNNT(12,0) system. Binding energy analysis shows that the combining processes of Co10/BNNT(12,0) system is exothermic, and therefore the Co10 nanowire can be encapsulated into semiconducting (12,0) BNNT and form a stable hybrid structure. The charges are transferred from Co10 nanowire to more electronegative BNNT, and the formed Co-N bonds have polar covalent bond characteristics. The magnetic moment of Co10/BNNT(12,0) system is smaller than that of the freestanding Co10 nanowire. The stable Co10/BNNT(12,0) system exhibit higher magnetic moment and half-metal character implying which can be useful for a wide variety of next-generation magnetic data storage and spintronics devices.
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