Preparation of NiCo2S4 nanomaterials and their electrochemical properties
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摘要: 采用溶剂热方法制备出Co-MOF前驱体，通过Ni2+水解刻蚀前驱体得到空心NiCo-LDH材料，再将其高温煅烧硫化得到NiCo2S4材料。借助金属有机框架的特性使得NiCo2S4材料有着更加优异的性能。电化学数据表明，NiCo2S4材料1 A·g−1的电流密度下具有204.8 mA·h·g−1(
1843.6 F·g−1)的高比容量，当电流密度增加到10 A·g−1时，其容量依然有着最初的50.9%。最后，以活性炭为负极，NiCo2S4材料为正极组装成为了混合型超级电容器，HSC装置在800 W·kg−1的功率密度下有着38 W·h·kg−1的能量密度并且在10 A·g−1的电流密度下循环5000 圈后依然有着71.4%的容量保持率。Abstract: The Co-MOF precursor was prepared by solvothermal method, and the hollow NiCo-LDH material was obtained by hydrolyzing and etching the precursor with Ni2+, and then NiCo2S4 material was obtained by high temperature calcination and sulfurization. The properties of the metal-organic framework make the NiCo2S4 material have more excellent performance. The electrochemical data show that the NiCo2S4 material has a high specific capacity of 204.8 mA·h·g−1 (1843.6 F·g−1) at a current density of 1 A·g−1, and when the current density is increased to 10 A·g−1, its capacity is still 50.9% of the initial capacity. Finally, a hybrid supercapacitor was assembled using activated carbon as the negative electrode and NiCo2S4 material as the positive electrode, and the HSC device had an energy density of 38 W·h·kg−1 at a power density of 800 W·kg−1 and a capacity retention rate of 71.4% after5000 cycles at a current density of 10 A·g−1.-
Key words:
- Co-MOF /
- NiCo2S4 /
- Supercapacitors /
- Electrochemistry /
- Metal-organic framework
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图 2 (a) Co-MOF的XRD图；(b) NiCo2S4的XRD图
Figure 2. (a) XRD pattern of Co-MOF; (b) XRD pattern of NiCo2S4
图 3 (a) Co-MOF；(b) NiCo-LDH；(c，d)不同倍数的NiCo2S4的SEM图
Figure 3. SEM images of (a) Co-MOF; (b) NiCo-LDH; (c, d) NiCo2S4 at different multiplicities
图 4 (a-b)NiCo2S4不同倍镜下的TEM图像；(c)NiCo2S4选取区域的晶格条纹；(d)NiCo2S4样品的选区电子衍射图；(e)NiCo2S4的Mapping图所选区域；(f-h)NiCo2S4所含元素各自的Mapping图
Figure 4. (a-b) TEM images of NiCo2S4 at different magnifications; (c) lattice fringes in selected regions of NiCo2S4; (d) electron diffractograms of selected regions of NiCo2S4 samples; (e) selected regions of the Mapping map of NiCo2S4; (f-h) Mapping maps of the respective elements contained in NiCo2S4
图 5 NiCo2S4的(a) Co 2p；(b) C 1s；(c) Ni 2p和(dS 2p的XPS图谱
Figure 5. XPS profiles of (a) Co 2p; (b) C 1s; (c) Ni 2p and (d) S 2p of NiCo2S4
图 6 NiCo2S4材料的(a) N2吸附-脱附等温线；(b)吸附孔径分布曲线
Figure 6. (a) N2 adsorption-desorption isotherms; (b) adsorption pore size distribution curves for NiCo2S4 material
图 7 (a) NiCo2S4、NiCo-LDH、CoS2材料在50 mV·s−1扫描速率下的CV曲线(b) NiCo2S4在不同扫描速率下的CV曲线；(c) NiCo2S4、NiCo-LDH、CoS2材料1 A·g−1时的GCD曲线；(d) NiCo2S4的GCD曲线；(e) NiCo2S4、NiCo-LDH、CoS2材料的倍率曲线；(f)NiCo2S4的电化学阻抗谱
Figure 7. (a) CV curves of NiCo2S4, NiCo-LDH, and CoS2 materials at a scan rate of 50 mV·s−1 (b) CV curves of NiCo2S4 at different scan rates; (c) GCD curves of NiCo2S4, NiCo-LDH, and CoS2 materials at 1 A·g−1; (d) GCD curves of NiCo2S4; (e) multiplicity curves of NiCo2S4, NiCo-LDH, and CoS2 materials; (f) electrochemical impedance spectra of NiCo2S4
图 8 (a) NiCo2S4 CV曲线中峰值电流的位置；(b) NiCo2S4峰值电流与扫描速率对数之间的关系图；(c) NiCo2S4的赝电容贡献率图；(d) NiCo2S4在10 A·g−1下的循环性能
Figure 8. (a) Position of peak current in NiCo2S4 CV curve; (b) Plot of NiCo2S4 peak current versus logarithm of scan rate; (c) Plot of pseudo capacitance contribution of NiCo2S4; (d) Cycling performance of NiCo2S4 at 10 A·g−1
图 9 (a)混合型超级电容器的示意图；(b) NiCo2S4和AC在50 mV·s−1下的CV曲线；(c) NiCo2S4//AC在50 mV·s−1不同电压下的CV曲线；(d)不同的扫描速率下HSC装置的CV曲线
Figure 9. (a) Schematic of hybrid supercapacitor; (b) CV curves of NiCo2S4 and AC at 50 mV·s−1; (c) CV curves of NiCo2S4//AC at different voltages of 50 mV·s−1; and (d) CV curves of the HSC device at different scan rates
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