平纹编织SiC<sub>f</sub>/SiC复合材料的中温蠕变断裂时间及损伤机理

朱思雨; 张巧君; 洪智亮; 荆开开; 管皞阳; 程赞粼; 刘永胜; 王波; 张程煜

平纹编织SiC_f/SiC复合材料的中温蠕变断裂时间及损伤机理

1.
西北工业大学　材料学院 NPU-SAS联合研究中心, 西安 710072
2.
西安航空制动科技有限公司, 兴平 713106
3.
中国航发商用航空发动机有限责任公司, 上海 200241
4.
西北工业大学　超高温结构复合材料国家级重点实验室,西安 710072
5.
西北工业大学　航空学院, 西安 710072

基金项目: 国家自然科学基金(51572224)；高等学校学科创新引智计划(BP0820014)；国家重点研发计划(2017YFB1103504)

详细信息

通讯作者:
张程煜，博士，教授，博士生导师，研究方向为材料的高温力学性能　E-mail: cyzhang@nwpu.edu.cn

中图分类号: TB332
计量
- 文章访问数: 220
- HTML全文浏览量: 84
- 被引次数: 0
出版历程
- 收稿日期: 2021-11-22
- 录用日期: 2022-01-20
- 修回日期: 2022-01-10
- 网络出版日期: 2022-02-23

Creep rupture time and damage mechanisms of a plain woven SiC_f/SiC composite at intermediate temperature

1.
NPU-SAS Joint Research Center, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China
2.
Xi'an Aviation Brake Technology Co. Ltd., Xingping 713106, China
3.
AECC Commercial Aircraft Engine Co. Ltd., Shanghai 200241, China
4.
Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an 710072, China
5.
School of Aeronautics, Northwestern Polytechnical University, Xi’an 710072, China

摘要

摘要: 碳化硅纤维增强碳化硅复合材料(SiC_f/SiC)是制造下一代航空发动机热结构件的关键材料，中等温度(~800℃)下，SiC_f/SiC的蠕变断裂时间t_u显著下降。为此，研究了平纹编织SiC_f/SiC(2D-SiC_f/SiC)在空气中500~1000℃的蠕变性能及损伤机理，应力水平为100~160 MPa。利用SEM、TEM和EDS分析了断口形貌、微观组织和化学成分。结果表明：2D-SiC_f/SiC的t_u与温度和应力水平有关。相同温度下，2D-SiC_f/SiC的t_u随着应力增加而变短。当温度为800℃、蠕变应力大于基体开裂应力(PLS)时，2D-SiC_f/SiC发生中温脆化现象，其t_u下降。2D-SiC_f/SiC的中温脆化机制为基体开裂、BN界面氧化和SiO₂替代BN界面导致的强界面/基体结合。2D-SiC_f/SiC的t_u与应力在对数坐标下呈线性关系，且在过渡应力时发生线性转变，过渡应力与PLS一致。提高PLS能够有效提高SiC_f/SiC的t_u。
- SiC_f/SiC复合材料 /
- 蠕变断裂时间 /
- BN界面 /
- 氧化 /
- 损伤机理
Abstract: Silicon carbide fiber reinforced silicon carbide composites (SiC_f/SiC) have great potential to be used in the thermal structure of next-generation aero-engines. The creep rupture time t_u of SiC_f/SiC is significantly reduced at intermediate temperatures (~800℃). Therefore, this paper investigated the creep rupture behaviors of a plain weave SiC_f/SiC (2D-SiC_f/SiC) at 500℃, 800℃ and 1000℃ with stresses of 100 to 160 MPa in air. The morphology, microstructure and compositions of the crept specimens were observed by a scanning electron microscope, a high-resolution transmission electron microscope and a energy dispersive spectrometer. The results show that the creep rupture time of 2D-SiC_f/SiC is closely related to the applied temperatures and stresses. At the same temperature, t_udecreases with the increasing stresses at constant temperatures. When the temperature is 800℃ and the stress is greater than the proportional limit stress (PLS), embrittlement takes place for the 2D-SiC_f/SiC, which means the t_u and the total creep strainare much shorter than those at 500℃ and 1000℃. The embrittlement mechanisms involve matrix cracking, oxidization of BN and formation of strong fiber/matrix interphase bonding by the filling of SiO₂, as well as for the 2D-SiC_f/SiC at intermediate temperatures. t_u vs. the applied stress follows linear relationship in logarithmic axis, whose transition appears when the applied stress equals to PLS.
- SiC_f/SiC composites /
- creep rupture time /
- BN interphase /
- oxidation /
- damage mechanisms

HTML全文

图 1 2D-SiC_f/SiC试样尺寸与形状(单位：mm)

Figure 1. Dimensions and shape of 2D-SiC_f/SiC composites (Unit:mm)

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图 2 2D-SiC/SiC的室温拉伸应力-应变曲线

Figure 2. Tensile stress-strain curves of 2D-SiC_f/SiC at room temperatures

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图 3 2D-SiC_f/SiC在120 MPa不同温度条件下的蠕变曲线

Figure 3. Creep curves at 120 MPa under different temperatures for 2D-SiC_f/SiC composite

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图 4 2D-SiC_f/SiC在800℃的应力-蠕变断裂时间曲线

Figure 4. Creep rupture time verse stress of 2D-SiC_f/SiC at 800℃

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图 5 2D-SiC_f/SiC试样的蠕变断口SEM图像：(a) 500℃/120 MPa，蠕变断裂时间t_u=490 h；(b) 800℃/120 MPa，t_u=22 h；(c) 1000℃/120 MPa，t_u=33 h

Figure 5. SEM images of fracture surface of 2D-SiC_f/SiC specimen: (a) 500℃/120 MPa, creep rupture time t_u=490 h; (b) 800℃/120 MPa, t_u=22 h; (c) 1000℃/120 MPa, t_u=33 h

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图 6 蠕变应力为120 MPa时，2D-SiC_f/SiC的不同蠕变温度的试样断口的氧化区SEM图像：(a) 500℃；(b) 800℃及区域孔洞发大照片；(c) 1000℃

Figure 6. SEM images of the oxidation zones of 2D-SiC_f/SiC crept at different temperatures with stress of 120 MPa: (a) 500℃; (b) 800℃ and enlarged image of voids in; (c)1000℃

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图 7 原始2D-SiC_f/SiC的界面TEM图像

Figure 7. TEM image of the interface of the as-received 2D-SiC_f/SiC

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图 8 2D-SiC_f/SiC在800℃/120MPa蠕变断裂后氧化区的界面TEM图像和成分分布：(a) TEM；(b) N, Si, O 和C元素的EDS图

Figure 8. TEM and EDS images of the interface of the embrittlement area for the 2D-SiC_f/SiC crept at 800℃/120 MPa: (a) TEM images; (b) EDS images showing the distribution of element N, Si, O and C

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图 9 SiC_f/SiC复合材料应力-t_u图

Figure 9. t_u verse stress of the SiC_f/SiC composites

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表 1 2D-SiC_f/SiC的中温蠕变性能

Table 1. Creep properties of 2D-SiC_f/SiC at intermediate temperature

Temperature/ ℃	Stress/ MPa	Rupture time/h	Steady-state creep strain rate/s⁻¹
500	110	500+	4.0×10⁻¹⁰
	120	490	7.1×10⁻¹⁰
	160	64	1.4×10⁻⁸
800	100	145+	1.2×10⁻⁹
	110	24	3.9×10⁻⁹
	120	22	5.4×10⁻⁹
	120	10	9.0×10⁻⁹
	120	8	7.3×10⁻⁹
	160	4	7.9×10⁻⁹
	160	6	9.1×10⁻⁹
1000	100	195+	9.1×10⁻¹⁰
	110	119	5.3×10⁻⁹
	120	33	1.7×10⁻⁸

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