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平纹编织SiCf/SiC复合材料的中温蠕变断裂时间及损伤机理

朱思雨 张巧君 洪智亮 荆开开 管皞阳 程赞粼 刘永胜 王波 张程煜

朱思雨, 张巧君, 洪智亮, 等. 平纹编织SiCf/SiC复合材料的中温蠕变断裂时间及损伤机理[J]. 复合材料学报, 2022, 40(0): 1-8
引用本文: 朱思雨, 张巧君, 洪智亮, 等. 平纹编织SiCf/SiC复合材料的中温蠕变断裂时间及损伤机理[J]. 复合材料学报, 2022, 40(0): 1-8
Siyu ZHU, Qiaojun ZHANG, Zhiliang HONG, Kaikai JING, Haoyang GUAN, Zanlin CHENG, Yongsheng LIU, Bo WANG, Chengyu ZHANG. Creep rupture time and damage mechanisms of a plain woven SiCf/SiC composite at intermediate temperature[J]. Acta Materiae Compositae Sinica.
Citation: Siyu ZHU, Qiaojun ZHANG, Zhiliang HONG, Kaikai JING, Haoyang GUAN, Zanlin CHENG, Yongsheng LIU, Bo WANG, Chengyu ZHANG. Creep rupture time and damage mechanisms of a plain woven SiCf/SiC composite at intermediate temperature[J]. Acta Materiae Compositae Sinica.

平纹编织SiCf/SiC复合材料的中温蠕变断裂时间及损伤机理

基金项目: 国家自然科学基金(51572224);高等学校学科创新引智计划(BP0820014);国家重点研发计划(2017YFB1103504)
详细信息
    通讯作者:

    张程煜,博士,教授,博士生导师,研究方向为材料的高温力学性能 E-mail: cyzhang@nwpu.edu.cn

  • 中图分类号: TB332

Creep rupture time and damage mechanisms of a plain woven SiCf/SiC composite at intermediate temperature

  • 摘要: 碳化硅纤维增强碳化硅复合材料(SiCf/SiC)是制造下一代航空发动机热结构件的关键材料,中等温度(~800℃)下,SiCf/SiC的蠕变断裂时间tu显著下降。为此,研究了平纹编织SiCf/SiC(2D-SiCf/SiC)在空气中500~1000℃的蠕变性能及损伤机理,应力水平为100~160 MPa。利用SEM、TEM和EDS分析了断口形貌、微观组织和化学成分。结果表明:2D-SiCf/SiC的tu与温度和应力水平有关。相同温度下,2D-SiCf/SiC的tu随着应力增加而变短。当温度为800℃、蠕变应力大于基体开裂应力(PLS)时,2D-SiCf/SiC发生中温脆化现象,其tu下降。2D-SiCf/SiC的中温脆化机制为基体开裂、BN界面氧化和SiO2替代BN界面导致的强界面/基体结合。2D-SiCf/SiC的tu与应力在对数坐标下呈线性关系,且在过渡应力时发生线性转变,过渡应力与PLS一致。提高PLS能够有效提高SiCf/SiC的tu

     

  • 图  1  2D-SiCf/SiC试样尺寸与形状(单位:mm)

    Figure  1.  Dimensions and shape of 2D-SiCf/SiC composites (Unit:mm)

    图  2  2D-SiC/SiC的室温拉伸应力-应变曲线

    Figure  2.  Tensile stress-strain curves of 2D-SiCf/SiC at room temperatures

    图  3  2D-SiCf/SiC在120 MPa不同温度条件下的蠕变曲线

    Figure  3.  Creep curves at 120 MPa under different temperatures for 2D-SiCf/SiC composite

    图  4  2D-SiCf/SiC在800℃的应力-蠕变断裂时间曲线

    Figure  4.  Creep rupture time verse stress of 2D-SiCf/SiC at 800℃

    图  5  2D-SiCf/SiC试样的蠕变断口SEM图像:(a) 500℃/120 MPa,蠕变断裂时间tu=490 h;(b) 800℃/120 MPa,tu=22 h;(c) 1000℃/120 MPa,tu=33 h

    Figure  5.  SEM images of fracture surface of 2D-SiCf/SiC specimen: (a) 500℃/120 MPa, creep rupture time tu=490 h; (b) 800℃/120 MPa, tu=22 h; (c) 1000℃/120 MPa, tu=33 h

    图  6  蠕变应力为120 MPa时,2D-SiCf/SiC的不同蠕变温度的试样断口的氧化区SEM图像:(a) 500℃;(b) 800℃及区域孔洞发大照片;(c) 1000℃

    Figure  6.  SEM images of the oxidation zones of 2D-SiCf/SiC crept at different temperatures with stress of 120 MPa: (a) 500℃; (b) 800℃ and enlarged image of voids in; (c)1000℃

    图  7  原始2D-SiCf/SiC的界面TEM图像

    Figure  7.  TEM image of the interface of the as-received 2D-SiCf/SiC

    图  8  2D-SiCf/SiC在800℃/120MPa蠕变断裂后氧化区的界面TEM图像和成分分布:(a) TEM;(b) N, Si, O 和C元素的EDS图

    Figure  8.  TEM and EDS images of the interface of the embrittlement area for the 2D-SiCf/SiC crept at 800℃/120 MPa: (a) TEM images; (b) EDS images showing the distribution of element N, Si, O and C

    图  9  SiCf/SiC复合材料应力-tu

    Figure  9.  tu verse stress of the SiCf/SiC composites

    表  1  2D-SiCf/SiC的中温蠕变性能

    Table  1.   Creep properties of 2D-SiCf/SiC at intermediate temperature

    Temperature/
    Stress/
    MPa
    Rupture
    time/h
    Steady-state creep
    strain rate/s−1
    500110500+4.0×10−10
    1204907.1×10−10
    160641.4×10−8
    800100145+1.2×10−9
    110243.9×10−9
    120225.4×10−9
    120109.0×10−9
    12087.3×10−9
    16047.9×10−9
    16069.1×10−9
    1000100195+9.1×10−10
    1101195.3×10−9
    120331.7×10−8
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  • 收稿日期:  2021-11-22
  • 录用日期:  2022-01-20
  • 修回日期:  2022-01-10
  • 网络出版日期:  2022-02-23

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