Abstract:
K
0.5Na
0.5NbO
3(KNN) ceramics exhibit low room-temperature permittivity, large remanent polarization and low breakdown electric field, which resulting in poor energy storage performance. Herein, the K
0.495Na
0.495Tm
0.003La
xBi
(0.007−x)Nb
0.7Ta
0.3O
3(x=0.05%-0.2%) ceramics were fabricated via an A/B-site co-doping strategy: the refined ceramic grains, along with cation vacancies and oxygen vacancies induced by donor doping of A-site Bi
3+、La
3+ and Tm
3+, lead to an increased dielectric constant; Dopants with distinct ionic radii and valence states facilitate the formation of polar nanoregions (PNRs), which reduced the remanent polarization
Pr. Grain refinement coupled with bandgap widening originating from A/B-site La
3+ and Ta
5+ raised the breakdown electric field
Eb. The K
0.495Na
0.495Tm
0.003La
0.001Bi
0.006Nb
0.7Ta
0.3O
3 ceramic exhibited optimal excellent dielectric and energy storage performance: room-temperature permittivity
εr=
1646 at 100 kHz, tan
δ=0.036, relaxation factor
γ=1.81, low
Pr of 1.5 μC/cm
2 and enhanced
Eb of 130 kV/cm, an energy storage density of 1.22 J/cm
3 and efficiency of 86% are obtained. The simultaneous enhancement of dielectric and energy-storage performances make KNN-based ceramics have certain application potential in the fields of pulse power capacitors and energy storage.