A/B位离子共掺增强K0.5Na0.5NbO3陶瓷的介电和储能性能

Enhanced the dielectric and energy storage properties of K0.5Na0.5NbO3 ceramics by A/B-site ion co-doping

  • 摘要: K0.5Na0.5NbO3陶瓷的常温介电常数低,剩余极化大、击穿场强低,导致其储能性能不佳。本文通过A/B位共掺策略合成K0.495Na0.495Tm0.003LaxBi(0.007−x)Nb0.7Ta0.3O3(x=0.05%-0.2%)陶瓷:共掺后细化的陶瓷晶粒和A位Bi3+、La3+、Tm3+施主掺杂形成的离子空位、氧空位提高了介电常数;差异化离子半径和价态的掺杂,形成极性纳米区(PNRs),降低了剩余极化(Pr);晶粒细化和A/B位La3+、Ta5+的宽禁带提升了击穿场强Eb,在K0.495Na0.495Tm0.003La0.001Bi0.006Nb0.7Ta0.3O3陶瓷中呈现优良的介电和储能性能:室温介电常数ε100 KHz=1646,介电损耗tanδ=0.036,弛豫因子γ=1.81,剩余极化低至1.5 μC/cm2,Eb增加到130 kV/cm,储能密度和效率分别达到1.22 J/cm3和86%,实现了K0.5Na0.5NbO3基陶瓷介电和储能性能的同步提升,使KNN陶瓷在脉冲功率电容器和储能领域具有一定的应用潜力。

     

    Abstract: K0.5Na0.5NbO3(KNN) ceramics exhibit low room-temperature permittivity, large remanent polarization and low breakdown electric field, which resulting in poor energy storage performance. Herein, the K0.495Na0.495Tm0.003LaxBi(0.007−x)Nb0.7Ta0.3O3(x=0.05%-0.2%) ceramics were fabricated via an A/B-site co-doping strategy: the refined ceramic grains, along with cation vacancies and oxygen vacancies induced by donor doping of A-site Bi3+、La3+ and Tm3+, lead to an increased dielectric constant; Dopants with distinct ionic radii and valence states facilitate the formation of polar nanoregions (PNRs), which reduced the remanent polarization Pr. Grain refinement coupled with bandgap widening originating from A/B-site La3+ and Ta5+ raised the breakdown electric field Eb. The K0.495Na0.495Tm0.003La0.001Bi0.006Nb0.7Ta0.3O3 ceramic exhibited optimal excellent dielectric and energy storage performance: room-temperature permittivity εr=1646 at 100 kHz, tanδ=0.036, relaxation factor γ=1.81, low Pr of 1.5 μC/cm2 and enhanced Eb of 130 kV/cm, an energy storage density of 1.22 J/cm3 and efficiency of 86% are obtained. The simultaneous enhancement of dielectric and energy-storage performances make KNN-based ceramics have certain application potential in the fields of pulse power capacitors and energy storage.

     

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