ZnIn2S4/PbBi2Nb2O9复合材料的光-压电协同催化性能

Photo-piezoelectric synergistic catalytic performance of ZnIn2S4/PbBi2Nb2O9 composites

  • 摘要: 光催化技术是降解有机污染物最有效的途径之一,但常见的光催化材料的光吸收范围有限,光生电子对复合速度较快,极大地限制了光催化材料的应用。通过引入电场来减少光生电子与空穴的复合,加速载流子分离和迁移,开发具有光和应力双响应的高性能催化剂尤为重要。本研究采用低温溶剂热法在片状PbBi2Nb2O9表面生长ZnIn2S4纳米片,合成了ZnIn2S4/PbBi2Nb2O9复合材料,实现了可见光下高效的光-压电协同催化降解性能。在光照及超声振动的协同作用下,120 min内50%-ZnIn2S4/PbBi2Nb2O9对盐酸四环素(TC)的降解率达94.96%,降解速率常数为仅超声振动作用下的8.38倍,仅光照条件下的1.76倍;同时在研究过程中,探讨了ZnIn2S4/PbBi2Nb2O9复合光催化剂活性提高的主要原因,其高催化性能可归因于PbBi2Nb2O9作为压电材料,在超声振动作用下,材料内部形成了内建电场,有效地提高了光生载流子的分离效率。同时,PbBi2Nb2O9和ZnIn2S4之间形成的S型异质结,也促进了光生电子-空穴对的转移。

     

    Abstract: Photocatalytic technology is one of the most effective ways to degrade organic pollutants, but the light absorption range of common photocatalytic materials is limited, and the recombination speed of photogenerated electrons is relatively fast, which greatly limits the application of photocatalytic materials. It is particularly important to develop high-performance catalysts with both light and stress responses by introducing an electric field to reduce the recombination of photogenerated electrons and holes, and to accelerate carrier separation and migration. In this study, ZnIn2S4/PbBi2Nb2O9 composites were synthesized by growing ZnIn2S4/PbBi2Nb2O9 composites on the surface of sheet PbBi2Nb2O9 by low-temperature solvothermal method, and the efficient light-piezoelectric synergistic catalytic degradation performance under visible light was realized. Under the synergistic effect of light and ultrasonic vibration, the degradation rate of tetracycline hydrochloride (TC) by 50%- ZnIn2S4/PbBi2Nb2O9 was 94.96% within 120 min, and the degradation rate constant was 8.38 times that of ultrasonic vibration only and 1.76 times that of light only. Its high catalytic performance can be attributed to the fact that PbBi2Nb2O9 is used as a piezoelectric material, and under the action of ultrasonic vibration, a built-in electric field is formed inside the material, which effectively improves the separation efficiency of photogenerated carriers. At the same time, the S-type heterojunction formed between PbBi2Nb2O9 and ZnIn2S4 also promotes the transfer of photogenerated electron-hole pairs.

     

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