CuO-g-C3N4/C复合材料的模板诱导合成及其电化学性能

Template-induced synthesis of CuO-g-C3N4/C composite and its electrochemical property

  • 摘要: 多价铜基氧化物的理论比容量较高,但自身导电性和稳定性差;石墨相氮化碳(g-C3N4)稳定性好、氮含量高、合成方法简单,但其电容性能不佳;生物质炭具有较大的比表面积、相对较好的导电性和刚性结构。为使各相优势得到充分发挥,并且尽量弥补其缺陷,本文以尿素为g-C3N4前驱体,杏鲍菇为模板诱导合成了具有疏松多孔结构的g-C3N4/C两相复合材料,后使用水热法将CuO均匀负载在g-C3N4/C表面及孔洞内得到CuO-g-C3N4/C三相复合材料。电化学测试结果表明,CuO-g-C3N4/C的最高比电容为262.8F/g,2000次恒电流充放电循环后的电容保持率为97%,在不同电流密度下仍具有良好的充放电性能,CuO-g-C3N4/C的电容性能和稳定性能较好。这表明CuO和g-C3N4/C的三相复合不仅提高了CuO的导电性,而且使g-C3N4的电容性能得到改善,从而使整体材料的储能性能、导电性和稳定性得到提升。

     

    Abstract: The theoretical specific capacity of polyvalent copper-based oxides is considerable, but their conductivity and stability are inadequate. Graphite phase carbon nitride (g-C3N4) exhibits good stability, high nitrogen content and simple synthesis method; however, its capacitance performance is poor. Biochar possesses a substantial specific surface area, relatively good electrical conductivity and rigid structure. To fully leverage the advantages of single phase and compensate for their respective shortcomings, a two-phase compound g-C3N4/C with porous structure was synthesized. Urea was served as the precursor of g-C3N4, and pleurorus eryngii was selected as the template. Subsequently, CuO was uniformly anchored on the surface and pores of g-C3N4/C through hydrothermal method, resulting in three-phase CuO-g-C3N4/C. Electrochemical testing reveals that the maximum specific capacitance of CuO-g-C3N4/C reaches 262.8F/g, with a capacitance retention rate of 97% after 2000 constant current charge-discharge cycles. CuO-g-C3N4/C consistently exhibits excellent charge and discharge performance across different current densities, showcasing superior capacitance and stability of CuO-g-C3N4/C. This highlights that the combination of CuO and g-C3N4/C in a three-phase structure not only enhances the conductivity of CuO, but also enhances the capacitive performance of g-C3N4, thereby improving the energy storage performance, electrical conductivity and stability of the overall material.

     

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