α－Si<sub>3</sub>N<sub>4</sub>晶须、晶柱与生长温度关系的研究

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α－Si₃N₄晶须、晶柱与生长温度关系的研究

徐功骅, 来月英, 刘艳生, 尉京志, 吴华武, 张克宏

文章导航 > 复合材料学报 > 1996 > 13(1): 55-59

徐功骅, 来月英, 刘艳生, 等. α－Si3N4晶须、晶柱与生长温度关系的研究[J]. 复合材料学报, 1996, 13(1): 55-59.

引用本文:

徐功骅, 来月英, 刘艳生, 等. α－Si₃N₄晶须、晶柱与生长温度关系的研究[J]. 复合材料学报, 1996, 13(1): 55-59.

Xu Gonghua, Lai Yueying, Liu Yansheng, et al. STUDY OF THE RELATIONSHIP BETWEEN ALPHA-Si3N4 WHISKERS,CRYSTALLINE PILLAR AND GROWTH TEMPERATURE[J]. Acta Materiae Compositae Sinica, 1996, 13(1): 55-59.

Citation:

Xu Gonghua, Lai Yueying, Liu Yansheng, et al. STUDY OF THE RELATIONSHIP BETWEEN ALPHA-Si₃N₄ WHISKERS,CRYSTALLINE PILLAR AND GROWTH TEMPERATURE[J]. Acta Materiae Compositae Sinica, 1996, 13(1): 55-59.

徐功骅, 来月英, 刘艳生, 等. α－Si3N4晶须、晶柱与生长温度关系的研究[J]. 复合材料学报, 1996, 13(1): 55-59.

引用本文:

徐功骅, 来月英, 刘艳生, 等. α－Si₃N₄晶须、晶柱与生长温度关系的研究[J]. 复合材料学报, 1996, 13(1): 55-59.

Xu Gonghua, Lai Yueying, Liu Yansheng, et al. STUDY OF THE RELATIONSHIP BETWEEN ALPHA-Si3N4 WHISKERS,CRYSTALLINE PILLAR AND GROWTH TEMPERATURE[J]. Acta Materiae Compositae Sinica, 1996, 13(1): 55-59.

Citation:

Xu Gonghua, Lai Yueying, Liu Yansheng, et al. STUDY OF THE RELATIONSHIP BETWEEN ALPHA-Si₃N₄ WHISKERS,CRYSTALLINE PILLAR AND GROWTH TEMPERATURE[J]. Acta Materiae Compositae Sinica, 1996, 13(1): 55-59.

α－Si₃N₄晶须、晶柱与生长温度关系的研究

1.
清华大学化学系, 北京 100084;
2.
同济大学化学系, 上海 200092

基金项目: 国家自然科学基金

计量
- 文章访问数: 717
- PDF下载量: 366
- 被引次数: 0
出版历程
- 收稿日期: 1994-10-31
- 修回日期: 1995-01-10
- 刊出日期: 1996-03-01

STUDY OF THE RELATIONSHIP BETWEEN ALPHA-Si₃N₄ WHISKERS,CRYSTALLINE PILLAR AND GROWTH TEMPERATURE

1.
Department of Chemistry, Tsinghua University, Beijing 100084;
2.
Department of Chemistry, Tongji University, Shanghai 200092

摘要: 本文采用无定形氮化硅超细粉制备α-Si₃N₄晶须和晶柱,并对生长温度对晶须中的缺陷的影响进行了研究。结果表明:晶须生长时能否得到完整的晶体,与其生长温度有关,只有某一温度范围(1430℃±30℃)生长时,才能得到比较完整的晶体,晶须的生长温度太高或太低均会引起晶体生长的不完整性,晶须中会出现大量的缺陷,温度继续升高时,在晶须中又出现了晶粒,继而生长成晶柱。
- 晶须 /
- 晶柱 /
- α－Si₃N₄
Abstract: Alpha-silicon nitride whiskers and crystalline pillars were produced by amorphous silicon nitride ultrafine powders.The study includes the effect of growth temperature on the defect of whiskers.The results show that the integrity of obtained crystal has related to the growth temperature when whiskers are growing.The relatively integral crystal can only be obtained in a certain range of temperature(1430℃±30 ℃).The growth temperature too high or too low may cause imperfection of the growing crystal and the whiskers with many defects.If the temperature continues to go up,crystalline grain will appear in the whiskers which will become crystalline pillar afterwards.
- whisker /
- crystalline pillar /
- α-Si₃N₄

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