Volume 37 Issue 9
Sep.  2020
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ZHOU Qian, ZHANG Yao, CHEN Rong, et al. Effect of surface modification of SiO2 on properties of highly filled SiO2/polytetrafluoroethylene composite films[J]. Acta Materiae Compositae Sinica, 2020, 37(9): 2144-2151. doi: 10.13801/j.cnki.fhclxb.20191219.002
Citation: ZHOU Qian, ZHANG Yao, CHEN Rong, et al. Effect of surface modification of SiO2 on properties of highly filled SiO2/polytetrafluoroethylene composite films[J]. Acta Materiae Compositae Sinica, 2020, 37(9): 2144-2151. doi: 10.13801/j.cnki.fhclxb.20191219.002

Effect of surface modification of SiO2 on properties of highly filled SiO2/polytetrafluoroethylene composite films

doi: 10.13801/j.cnki.fhclxb.20191219.002
  • Received Date: 2019-10-30
  • Accepted Date: 2019-11-26
  • Available Online: 2019-12-19
  • Publish Date: 2020-09-15
  • Three silane coupling agents with different hydrophobic groups, namely phenyl-containing coupling agent 1(Ph-1), fluorine-containing coupling agent 2(F-2) and a glycidoxy-containing coupling agent 3(GP-3) were used to modify SiO2. The SiO2/polytetrafluoroethylene(PTFE) composite films with 35wt% SiO2 and thickness of 50 μm were prepared by air-assisted dry blending, cold-pressing, sintering and skiving techniques. The dispersion of SiO2 throughout the PTFE matrix is uniform after the modification. The effects of F-2 contents on the properties of SiO2/PTFE composite film were studied. The results show that when the content(mass ratio to SiO2) of the coupling agent is 0.3%, the pinhole defects of SiO2/PTFE composite film are rarely observed, and the tensile strength increases from 9.2 MPa to 16.2 MPa. Meanwhile, the dielectric constant decreases from 2.475 to 2.416 at 10 GHz, and the dielectric loss decreases from 2.66×10−3 to 2.01×10−3, exhibiting improved dielectric properties.

     

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